9012 TO92 Search Results

9012 Unisonic

Abstract: 9012L-
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION  1 FEATURES TO-92 *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity

transistor c 9012

Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

Transistor-9013 h

Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9013 transistor

Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
Contextual Info: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER

9013 npn

Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012

9012 Unisonic

Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

transistor c 9012

Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

transistor c 9012

Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

PNP 9012

Abstract: transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn
Contextual Info: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type

transistor c 9012

Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
Contextual Info: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

9012 pnp

Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013
Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER

UTC 9013

Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
Contextual Info: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER

Contextual Info: LED Driver TYPE NO. MLD571 OPERATING VOLTAGE MIN MAX V (V) 1.2 4.5 OPERATING OUTPUT SINK CURRENT CURRENT MAX MIN (mA) (mA) 500 1 Application Circuit R1 0 -100 ohm 9012 or 8550 3-30 0 - 100 ohm FLASH RATE CASE NO. Hz (Approx.) 1.2 TO-92

diode st 4148

Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Contextual Info: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)

Contextual Info: SEM ICONDUCTOR KTC9013 TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity. • Complementary to K TC 9012. DIM G -1 M A X IM U M RATING Ta=25°C

9012 TO-92

Abstract: transistor s 9012
Contextual Info: DAVA 9012 TO-92 Plastic-Encapsulate Transistors FNP silicon TO-92 • ■ Ì È * tiÌ iÀ M £ < Ì T a = 2 5 ‘C m n a ìu ^ ÌS j£< I * VcBO -<10 V Vcso -20 V Vebo -5 V le -500 mA Pc 600 mW Ti 150 iC Tsli; - 55-150 TC 3.COLLECTOR ■ (T a= 2 5 'C )

transistor s9012

Abstract: s9012 B77X S9012 to-92 s9012 transistor
Contextual Info: TO-92 Plastic-Encapsulate Transistors S 9012 TRANSISTO R PNP F E A T U RES □ qi □ fct-• :/ j K • ?vv-7 - : ’ Pow er d is s ip a tio n TO-92 0 .6 2 5 W (Tam b=25°C ) P cm ; BBS C o lle c to r c u rre n t 1 .E M IT T E R Icm : -0 .5 A 2 .BASE base vo lta g e

Transistor 9012

Abstract: H9012 8550S SS9012
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A047BJ-00 芯片厚度：240±20µm 管芯尺寸：470x470µm 2 焊位尺寸：B 极 103×103µm2，E 极 98×98µm2

Transistor 9012

Abstract: H9012 equivalent a043 8550S H9012 SS9012 A043BJ-00 VCEO-20V
Contextual Info: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 9012 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A043BJ-00 芯片厚度：240±20µm 管芯尺寸：430x430µm 2 焊位尺寸：B 极 107×107µm2，E 极 101×101µm2

transistor BR 9013

Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As

Contextual Info: CRO MLD571 ONE Lamp / LED Driver DISCRIPTION The MLD571 are low power CMOS LSI in TO-92 package, designed for the application o f lamp and LED flash driver it can be operated without any external components. Therefore it is very suitable for such applications as flash badge, gift card, flash ear-ring and other flash products.

MLD571

Abstract: discription 12v lamp driver
Contextual Info: MLD571 ONE Lamp / LED Driver DISCRIPTION The MLD571 are low power CMOS LSI in TO-92 package, designed for the appliication of lamp and LED flash driver. It can be operated without any external components. Therefore it is very suitable for such applications as flash badge, gift card, flash ear-ring and other flash products.

transistor BR 9013

Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As