905NM Search Results

laser diode 905nm

Contextual Info: LASER DIODE LC-50S-905D LC-50S-905D is 905nm AIGaAs/GaAS single quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-905D is a CW single mode injection semiconductor laser

N 821 Diode

Abstract: laser diode 905nm LCQ90510S5N n type laser diode
Contextual Info: LCQ90510S5-N/M/P InGaAs Laser Diode Jun.2004. Ver. 0 ♦OVERVIEW LCQ 90510S5-Serie is a MOCVD grown 905nm band InGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 10mW for Laser, industrial optical module and sensor application

DPGAS3S09

Abstract: DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S
Contextual Info: P R E L I M I N A R Y SENSOR SOLUTIONS 905nm Epitaxial Double Cavity Multi-Quantum Well InGaAs Pulsed Laser Diode DPGA Series Overview This EPI-cavity structure possesses the same 25˚ beam divergence in the perpendicular direction as the PGA series product line, as well as

Contextual Info: LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL90F7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer QL90F7S-A/B/C InGaAs Laser Diode Jun.2004. Ver. 0 ♦OVERVIEW QL90F7S-A/B/C is a MOCVD grown 905nm band InGaAs laser diode with quantum well

laser diode 905nm

Abstract: CVD 65 CVD 165 Tyco diodes CVD 67 CVD-90 laser diode ldi 905 rangefinding CVD 166 905nm
Contextual Info: Catalog 1307895 Revised 9-04 Fiber Optic Products Catalog High Power Pulsed Laser Diodes The CVD series lasers are strained layer quantum well devices fabricated by the MOCVD process. These pulsed lasers are available with up to 140W of peak power and either 850nm or 905nm.

LA7810

Abstract: Stantel Components LA520 laser weapon stantel LA3-02 LA7-01 STC Defence Systems LA10-02 LA1-02
Contextual Info: ii: f • • « STCE 7137521 OQQÜObt. S SEE D s T C DEFENCE SYSTEMS . S T C .& <v'J/ 905nm Pulsed Window output I Laser Diodes r-Hhos a -i> LA Series á\J y .0 FEA TU RES: • • • • GaAs/GaAIAs single heterostructure laser design High peak output power for short pulse applications

dual led 660 905 red infrared

Abstract: led 660 905 red infrared oximeter oximeter 660 905 led 905 dual-emitter PDI-E832 905nm led 905 660
Contextual Info: GaAlAs High power IR LED Emitters 660nm/905nm PDI-E832 PACKAGE DIMENSIONS INCH [mm] .063 [1.60] .167 [4.24] C L .104 [2.64] C L .055 [1.40] RED L.E.D. CHIP .025 [0.64] I.R. L.E.D. CHIP .060 [1.52] CL METALIZED CERAMIC WIRE BONDS .250 [6.35] ENCAPSOLATE CONTACT B

laser diode 905nm

Abstract: C30724 EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09
Contextual Info: PGEW Series 905nm Plastic Pulsed Laser Diode Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of

Contextual Info: Hybrid Laser Diodes for Pulsed Operations 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified High Efficiency High Peak Power Emission 905nm Peak Emission Wavelength Low Voltage Operation

PGAS1S09

Abstract: PGAS1S24 PGAS3S09 PGAU1S12 PGAS1S03 905nm Multi-Quantum Well Strained InGaAs Pulsed laser diode 905nm PGAS1S12 PGAS1S16 PGAS3S06
Contextual Info: This series of devices employs elements from 75µm wide single sources to four stacks of 600µm wide elements. Using standard InGaAs quantum wells grown for 905nm, this group of devices effectively replaces conventional double heterostructure GaAsAlGaAs diodes in that wavelength

injection laser diode

Abstract: laser diode 905nm
Contextual Info: LASER DIODE LC-10S-905D LC-10S-905D is 905nm AIGaAs/GaAS single quantum well structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-10S-905D light source is a CW single mode injection semiconductor laser with built-in monitor

Contextual Info: GaAlAs High power IR LED Emitters 660nm/905nm PDI-E832 PACKAGE DIMENSIONS INCH [mm] .063 [1.60] .167 [4.24] C L .104 [2.64] C L .055 [1.40] RED L.E.D. CHIP .025 [0.64] I.R. L.E.D. CHIP .060 [1.52] CL METALIZED CERAMIC WIRE BONDS .250 [6.35] ENCAPSOLATE CONTACT B

3d scanner

Abstract: scanner 3d automatic room light control TX5 transmitter
Contextual Info: DATASHEET Key Features Trimble tx5 scanner The Trimble TX5 3D laser scanner is a revolutionary and highly versatile 3D scanning solution for a broad variety of scanning applications. The compact and lightweight design provides unmatched mobility at the job site, increasing field productivity. The intuitive and easy to use

raychem catalog termination kit and splicing kit

Abstract: raychem catalog for 33 kV cable termination kit Campus Italia Vol 1 sLED 1550nm c10 opto speed SFP fiber optic pinout Mounting tray arinc 404 sLED 1550nm c10 Feeder, Quad Tyco STM Thermistor C60 light peak 10G VSCEL
Contextual Info: FIBER OPTIC PRODUCTS LIGHT YEARS AHEAD Catalog 1307895 Revised 1-0 03 1 LIGHT YEARS AHEAD® Whether you’re designing local area networks, communications systems, or equipment, innovative fiber optic applications begin with innovative fiber optic products. Tyco Electronics offers a complete line of fiber optic

UBR10000

Abstract: nir source
Contextual Info: SSO-AD-230 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 active area 1) 0,042 mm ∅ 230 µm

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

CM51

Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0099 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-0099 2. Structure : 2-1. Planar type : pin diode. 2-2. Electrodes : Top side Anode : aluminum alloy . 3. Size : 3-1. Chip size : 100 mils x 100 mils (2.54 mm × 2.54 mm ).

Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0100 1. Scope : This specification applies to pin silicon photodiode chips, Device No. PD-0100 2. Structure : 2-1. Planar type : Pin diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.

PD-0090

Abstract: 80mils
Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-0090 1. Scope : This specification applies to PIN silicon photodiode chips, Device No. PD-0090 2. Structure : 2-1. Planar type : Pin diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.

Silicon Photodiode Chip

Contextual Info: SILICON PHOTODIODE CHIPS DEVICE NO. : PD-2054 1. Scope : This specification applies to NIP silicon photodiode chips, Device No. PD-2054 2. Structure : 2-1. Planar type : NIP diode. 2-2. Electrodes : Top side Anode : Aluminum alloy . Back side ( Cathode ) : Gold alloy.

laser SG-2000

Abstract: PULSED LASER DIODE DRIVER siemens 9606 laserdiode 905 905nm Plastic Pulsed Laser Diode PGEW2S09 Laser Diode 850nm 1300nm pulsed laser transmitter 1550 nm Laser-Diode 905nm 1S12
Contextual Info: Optoelectronic components Features max. pulse power ≥ 150 W @ 910 nm pulse lengths from < 1 ns to > 160 ns short rise and fall times max. pulse amplitude 80 – 100 A compact housing complete unit – no additional equipment needed adjustable pulse power optional

Contextual Info: High Power Pulsed Laser Diodes 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 ISO 9001:2008 Certiied www.laserdiode.com • High Efficiency / High Reliability • Stable Output from -40°C to +85°C • Single and Stacked Devices up to 100Watts

Contextual Info: Standard-Area Silicon Avalanche Photodiodes 230, 500 µm PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron active areas. Our Silicon APDs cover

808nm 1W laser diode

Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Contextual Info: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical