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IXGQ90N33TCD1 Abstract: ixgq90n33 IXGA90N33TC 90N33TCD1 90n33 90N33TC IXGQ90N33TC IXGQ90N33TCD Contextual Info: Trench Gate, High Speed, IGBTs IXGA90N33TC IXGQ90N33TC 90N33TCD1 For PDP Applications VCES = ICP = VCE sat ≤ 330V 360A 1.80V 90N33TCD1 90N33TC Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 330 V VGES VGEM Continuous Transient ±20	Original	IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 90N33TC 90N33TCD1 IC110 O-263 062in. 5-30-07-C IXGQ90N33TCD1 ixgq90n33 90N33TCD1 90n33 90N33TC IXGQ90N33TCD	PDF

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IXGQ90N33TCD1

Abstract: ixgq90n33 IXGA90N33TC 90N33TCD1 90n33 90N33TC IXGQ90N33TC IXGQ90N33TCD
Contextual Info: Trench Gate, High Speed, IGBTs IXGA90N33TC IXGQ90N33TC 90N33TCD1 For PDP Applications VCES = ICP = VCE sat ≤ 330V 360A 1.80V 90N33TCD1 90N33TC Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 330 V VGES VGEM Continuous Transient ±20

Original

IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 90N33TC 90N33TCD1 IC110 O-263 062in. 5-30-07-C IXGQ90N33TCD1 ixgq90n33 90N33TCD1 90n33 90N33TC IXGQ90N33TCD

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