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    9120 MOSFET Search Results

    9120 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    9120 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12v to 240v PWM inverter circuit

    Abstract: 240v n-channel depletion mosfet HV9120 4k resistor 50w "SMPS Controller" 12v to 240v inverter HV9120NG-G P-Channel Depletion Mosfet datasheet HV9120NG HV9120P
    Text: HV9120 High-Voltage, Current-Mode PWM Controller Features ► ► ► ► ► ► A unique input circuit allows the 9120 to self-start directly from a high voltage input, and subsequently take the power to operate from one of the outputs of the converter it is


    Original     		PDF HV9120 DSFP-HV9120 A120308 12v to 240v PWM inverter circuit 240v n-channel depletion mosfet HV9120 4k resistor 50w "SMPS Controller" 12v to 240v inverter HV9120NG-G P-Channel Depletion Mosfet datasheet HV9120NG HV9120P

    4.7uF 400V capacitor

    Abstract: capacitor 0.47uf 400v 100n ceramic capacitor 100V R11M2 capacitor c5 0.47uf 400v 100V schottky diode capacitor 0.1uf 400v resistor 1M 1uF 400V capacitor C9 0.1uf 200v
    Text: +13.5V to +16.5V VIN C5 4.7uF 25V 1 R1 1M 2 C1 0.47uF 8 SYNC 16 C2 39nF 3 R3 150k R4 300kHz 33k 4 5 Vin 16.67 15.05 13.33 D1 10MQ 100N D2 CMR1U EXT -04 P1 4 7 2 IRFR 1,12 8,10 9120 9,11 C8 0.6 Ohm 3,5 0.1uF T1 R6 200V 6 1:2 13 100 Lpri=48.8uH CS VP1-0190


    Original     		PDF 300kHz) VP1-0190 330uH 1008PS -334M -180V 470pF MAX1847 TMK325BJ475MN 4.7uF 400V capacitor capacitor 0.47uf 400v 100n ceramic capacitor 100V R11M2 capacitor c5 0.47uf 400v 100V schottky diode capacitor 0.1uf 400v resistor 1M 1uF 400V capacitor C9 0.1uf 200v

    Untitled

    Abstract: No abstract text available
    Text: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance High Speed Switching BVDSS 300V RDS ON 66m ID G 36A S Description AP80N30 from APEC provide the designer with the best combination of


    Original     		PDF AP80N30W AP80N30 O-220 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 66mΩ ID G 36A S Description AP80N30 from APEC provide the designer with the best combination of


    Original     		PDF AP80N30W AP80N30 O-220 100us 100ms

    80N30W

    Abstract: 80N30
    Text: Advanced Power Electronics Corp. AP80N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 66mΩ ID 36A S Description Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP80N30W-HF-3 AP80N30W-HF-3 AP80N30 80N30W 80N30W 80N30

    80N30W

    Abstract: AP80N30W
    Text: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 66mΩ ID G 88A S Description AP80N30 from APEC provide the designer with the best combination of fast


    Original     		PDF AP80N30W AP80N30 O-220 80N30W 80N30W AP80N30W

    AON6403L

    Abstract: FR 9120 aon6403
    Text: AON6403L P-Channel Power Transistor General Description Product Summary The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON6403L AON6403L FR 9120 aon6403

    AON6403

    Abstract: No abstract text available
    Text: AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON6403 AON6403

    Untitled

    Abstract: No abstract text available
    Text: AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON6403 AON6403

    1rfd9120

    Abstract: IRFD9120 00LQ
    Text: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =


    OCR Scan     		PDF IRFD9120 -100v 0-60Q 150KQ 1rfd9120 00LQ

    HV9111

    Abstract: hv9120pj
    Text: H V9110 in O m HV9111 H V 9120 Preliminary High-Voltage Switchmode Controllers Ordering Information_ Feedback + V IN Min Max 10V Voltage 120 V 10V 120 V ±1% ±10% Package Options Package Pins Plastic DIP Ceramic DIP 14 HV9110P


    OCR Scan     		PDF V9110 HV9111 HV9110P HV9111P HV9110C HV9111C HV9110PJ HV9111PJ HV9120P HV9120C HV9111 hv9120pj

    Untitled

    Abstract: No abstract text available
    Text: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H


    OCR Scan     		PDF IRFF9120, IRFF9121, IRFF9122 IRFF9123

    IRF9240

    Abstract: IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132
    Text: TH On SON / D I S T R I B U T O R SflE D TCSK Power MOSFETs Rugged-Series Power MOSFETs — P-Channel P aci ag e — • M axim u r n R a tin g s bvdss (V 60 100 150 20 0 <d s (A) r DS(O N) O HM S e AS (m i) 0.6 0.8 2.5 3 3.5 4 5 5.5 6 6.5 10 12 19 15 25


    OCR Scan     		PDF O-204 O-205 T0-220 O-247 irfd9113 irfd9123 irf9513 irf9511 irff9123 irff9121 IRF9240 IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132

    STF6045DV

    Abstract: BD405 transistor b 1185 BD 149 transistor
    Text: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL


    OCR Scan     		PDF DG30SDb STF6045DF STF6045DV O-240) PC-029« STF6045DV BD405 transistor b 1185 BD 149 transistor

    IRFD9123

    Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
    Text: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:


    OCR Scan     		PDF IRFD9120 IRFD9123 92CS-43262 IRFD9120 IRFD9123 92CS-43279 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z

    1rfd9120

    Abstract: No abstract text available
    Text: • H 4 3 D 5 E7 1 OOSMSfl? 7TT ■ a HAS I R F D r r i s 9 1 2 0 I R F D 9 1 2 3 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -1.0 A and -0.8A , -8 0 V and -10 0 V TO P VIEW • rDS ON = 0 .6 H and 0 .8 ÎI


    OCR Scan     		PDF IRFD9120 IRFD9123 JRFD9120, 1rfd9120

    IRF9120

    Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
    Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET


    OCR Scan     		PDF IRF9120/912110122/9123 IRFP9120/9121 IRF9520/9521 D0054DE IRF/IRFP9120, IRF9520 IRF/IRFP9121, IRF9521 IRF/IRFP9122, IRF9522 IRF9120 IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRFP9121

    axc differential amplifier

    Abstract: SI9120 an708 BUZ78
    Text: Tem ic SÌ9120 Semiconductors Universal Input Switchmode Controller Features • 10- to 450-V Input Range • Current-Mode Control • 125-mA Output Drive • Internal Start-Up Circuit • Internal Oscillator 1 MHz • SHUTDOWN and RESET Description The SÌ9120 is a BiC/DMOS integrated circNQTAGuit


    OCR Scan     		PDF 125-mA 450-VDC) 500-pF IRF820, BUZ78 BUZ80. AN707 AN708 S-54622-- 10-Nov-97 axc differential amplifier SI9120 an708

    IRF09120

    Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
    Text: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-37-25 IRFD9120 IRFD91S3 C-169 IRFD9120, IRFD9123 C-170 IRF09120 RFD9120 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123

    Untitled

    Abstract: No abstract text available
    Text: F s 3 DE D I S C S TH O M S O N ¡[LBgïïËMDes 6 s • 7^2^237 0 0 3 Q S C12 T ■ ' TSD20N1 OOF TSD20N100V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE - thomson _ TENTATIVE DATA TYPE TSD20N100F/V . . ■ . ■ V dss RDS on 1000 V 0.5 n


    OCR Scan     		PDF 003QSC TSD20N1 TSD20N100V TSD20N100F/V O-240) PC-029«

    schematic diagram UPS

    Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
    Text: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS


    OCR Scan     		PDF TSD180N1 TSD180N1OV TSD180N10F/V C045S0 T-91-20 O-240) schematic diagram UPS TSD180N10V k 815 MOSFET smps&ups TSD180N10F

    TSD40N50DV

    Abstract: aval d 317 transistor
    Text: BQE D m 7eia,i237_Qa3as'-iti ? • ■ TSD40N50DF TSD40N50DV SGS-THOMSON üLiOTTiOiöOi s N - CHANNEL ENHANCEMENT MODE _ FREDFET MODULE S-THOMSON g TENTATIVE DATA TY P E V dss RüS on Id TS D 40N 50D F/D V 500 V 0.12 £2 40 A . POWER MOS TRANSISTOR MODULE WITH


    OCR Scan     		PDF TSD40N50DF TSD40N50DV O-240) PC-029« TSD40N50DV aval d 317 transistor

    SD 1496 transistor

    Abstract: TSD2M350F
    Text: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE


    OCR Scan     		PDF QG3D534 TSD2M350F TSD2M350V TSD2M350F/V T-91-20 O-240) PC-029« SD 1496 transistor

    Untitled

    Abstract: No abstract text available
    Text: 3ÜE D r r j Ä 7# “Y~fi m 712q237 OOBObgg M • " ~ p CTM<? S G S -T H O M S O N WlE ô [lLieïïE(ô)B!]DOS B Y T 2 3 0 P l(V ) - 1 2 0 0 S-THÖMS0N FAST RECOVERY RECTIFIER DIODE ■ VERY HIGH REVERSE VOLTAGE CAPABILI­ TY ■ VERY LOW REVERSE RECOVERY TIME


    OCR Scan     		PDF 712q237 PC-029Â