IRLZ24N
Abstract: IRF1010 E DATASHEET 668 8e IRF1010 irf1010 MOSFET
Text: PD - 91357C IRLZ24N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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PDF
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91357C
IRLZ24N
O-220
O-220-AB.
O-220AB
IRF1010
IRLZ24N
IRF1010 E DATASHEET
668 8e
IRF1010
irf1010 MOSFET
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IRLZ24N
Abstract: IRF1010
Text: PD - 91357C IRLZ24N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
91357C
IRLZ24N
O-220
O-220-AB.
O-220AB
IRF1010
IRLZ24N
IRF1010
|
Untitled
Abstract: No abstract text available
Text: PD - 91357C IRLZ24N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
91357C
IRLZ24N
O-220
O-220-AB.
O-220AB
IRF1010
|