914 HIGH FREQUENCY SCHOTTKY RECTIFIER DIODE Search Results

C2D05120

Abstract: ua 8560 1200-VOLT C2D05120A defibrillator High Voltage Multipliers
Contextual Info: C2D05120A–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

C2D05120A

Contextual Info: C2D05120A VRRM = Silicon Carbide Schottky Diode Zero R ecovery • • • • • • • IF TC=135˚C = 8.5 A Rectifier Features 1200 V Qc = 28 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C2D05120–Silicon Carbide Schottky Diode VRRM = 1200 V Zero Recovery Rectifier IF = 5 A Qc = 28 nC Features • • • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

C2D10120A

Contextual Info: C2D10120A VRRM VRRM= 1200 = 1200 V V Silicon Carbide Schottky Diode Zero R ecovery Rectifier Features • • • • • • • IF TC=135˚C = 14.5 A IF = 10 A Qc nC 61 nC Qc = 61 Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage

Contextual Info: C3D10065A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • • • 650 V = 25 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

CSD01060E

Abstract: CSD01060 CSD01060A
Contextual Info: CSD01060 VRRM = Silicon Carbide Schottky Diode Zero R Features • • • • • • • IF TC=135˚C = 2 A Rectifier ecovery 600 V Qc = 3.3 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C3D08060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 11 A Z-Rec Rectifier Qc Features • • • • • • • 600 V = 21 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

c3d10060a

Contextual Info: C3D10060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • • • 600 V = 25 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C3D06065A VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 8.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 16 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage

Contextual Info: C3D03060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 6.7 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

Contextual Info: C3D08065A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 11 A Z-Rec Rectifier Qc Features • • • • • • • 650 V = 21 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C3D06060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 8.5 A Z-Rec Rectifier Qc Features • • • • • • • 600 V = 16 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: C3D04065A VRRM = VRRM = 650650 V V Silicon Carbide Schottky Diode IF ITF;C=135˚C 7.5 TC<135˚C= 7.6AA Z-Rec Rectifier Qc Qc = 8.5 = 8.5 nC nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application

Contextual Info: C3D04060A VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

NPN CD100 transistor

Abstract: smd transistor a68 NPN CD100 transistor file B80 smd diode Schottky Diode SC-62 octal MOSFET ARRAY smd transistor bq automotive mosfet SOT363 flash N-Channel Microcontrollers
Contextual Info: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 3 Semiconductors AUGUST 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. PMGD8000LN 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 2. PBSS4350X, PBSS5350X, PBSS4250X

907 TRANSISTOR smd

Abstract: PDTA144E catalog mosfet Transistor smd diode schottky code GW smd transistor bq smd diode GW at mega 48 microcontroller smd transistor y5 mosfet triggering circuit for inverter y4 smd transistor
Contextual Info: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 4 Semiconductors NOVEMBER 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. 74LVC1GX04 High performance crystal driver 2. BTA208X-1000B 1000 V high commutation, 3 quadrant triac

Contextual Info: SBM3200 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 UNDER DEVELOPMENT SPECIFICATIONS SUBJECT TO CHANGE ADVANCE INFORMATION Features • · · · · Guard Ring Die Construction for Transient Protection Very Low Leakage Current High Junction Temperature Capability

SBM3200-13

Abstract: J-STD-020A
Contextual Info: SBM3200 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEâ3 UNDER DEVELOPMENT SPECIFICATIONS SUBJECT TO CHANGE ADVANCE INFORMATION Features • · · · · Guard Ring Die Construction for Transient Protection Very Low Leakage Current High Junction Temperature Capability

Contextual Info: SPICE MODEL: MBRM5100H MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability

Contextual Info: SPICE MODEL: MBRM5100H MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability

Contextual Info: MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability

ax253

Abstract: 213CT050-3B7 4N25 applications max489 regulator S485
Contextual Info: A lilX IA I 19-0226; Rev 0; 1/94 Transform er D river for Iso la te d RS-485 In te rfa c e The MAX253 consists of a CMOS oscillator driving a pair of N-channel power switches. The oscillator runs at double the output frequency, driving a toggle flip-flop to ensure 50% duty cycle to each of the switches.