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91452E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRG4BC30UContextual Info: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91452E IRG4BC30U O-220AB O-220AB IRG4BC30U | |
Contextual Info: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
91452E IRG4BC30U O-220AB O-220AB | |
ic AM 12A
Abstract: IRG4BC30U
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Original |
91452E IRG4BC30U O-220AB O-220AB ic AM 12A IRG4BC30U |