91464 Search Results

IRG4PC40FD

Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

MB91F464AAPMC

Abstract: MB91V460 FR60 LQFP100 MB91460 VG96 jumper 2 pin NQPACK100SD-ND
Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910025-15 MB91460 SERIES EVALUATION BOARD SK-91464A-100PMC USER GUIDE SK-91464A-100PMC User Guide Revision History Revision History Date 2006/02/15 2006/05/11 2006/08/08 2006/11/01 2006/11/27 2007/03/02

MB91V460

Abstract: MB91460
Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910023-13 MB91V460 FAMILY PROBE CABLE PB-91464A-NLS-100PMC USER GUIDE PB-91464A-NLS-100PMC Revision History Revision History Date 2006-May-04 2007-Mar-02 2007-Apr-11 2008-Sep-16 Issue V1.0, HLi, First Release

IRG4PC40FD

Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4PC30S

Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
Contextual Info: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage

Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • Full Range of Matrices with up to 480K Gates 0.5 µm Drawn CMOS, 3 Metal Layers, Sea of Gates RAM and DPRAM Compilers Library Optimized for Synthesis, Floor Plan and Automatic Test Generation ATG

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

Contextual Info: 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 6 2 C PU B LIC ATIO N LOC A LL RIGHTS RESERVED. COPYRIGHT - AD By - R E V IS IO N S D IS T 39 P LTR D E S C R IP T IO N A2 DATE DWN 11 MAR11 REVISED PER E C O -1 1 -0 0 4 5 8 7 APVD RK HMR G REF.

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T - 2 6 7 P U B L IC A T IO N RIG HTS LOC R E S ER VE D . AD By - R E V IS IO N S D IS T 0 0 P LTR A1 r G REF “v v D E S C R IP T IO N DATE 11 MAR11 REVISED PER ECO-1 1-0 0 4 82 0

Contextual Info: 7 T H IS D R A W IN G C O P Y R IG H T IS - U N P U B L IS H E D . R ELEASED ALL By - FO R 2 6 P U B L IC A T IO N RIG HTS LOC R E S ER VE D . D IS T AD R E V IS IO N S 0 0 P LTR A1 D E S C R IP T IO N DATE 11 MAR11 REVISED PER E C O - 1 1 - 0 0 4 5 8 7 DWN

Contextual Info: 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 5 6 PU B LIC ATIO N ALL RIGHTS RESERVED. COPYRIGHT ~ By - G L REF. Y^Y^Y y 4.88 [.1 92] il D E F SPACES 1 .17 + 0.08 [.046 + .003] 0 .6 4 + 0 .0 3 [.025 + .0 0 1] TYP. 3.1 2 + 0.38 [. 123 + .0 1 5]

Contextual Info: 6 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 4 3 2 PU B LIC ATIO N LOC ALL RIGHTS RESERVED. COPYRIGHT - AD By - DIST R E V IS IO N S 39 LTR D E S C R IP T IO N A1 G ÎNÏMjVf a / a r ¿A A A 2.34 [.092] A. /6\ D /6\ A\ A\ A\ A\ A\ A\ A\ A\

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED 5 6 FOR PUBLICATION ALL RIGHTS RESERVED. By - G REF. 2.34 [.092] V V V V V V A A A 10 10 1 0 1 0 1 1 A A A D 2 .5 4 E SPACES E [.100] 1.17 + 0.08 [.046 + .003] 0.64+0.03 [.025 + .001 ] TYP. A a A A A A

Contextual Info: 7 TH IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D FOR 6 5 4 2 3 PU B LIC ATIO N LOC ALL RIGHTS RESERVED. COPYRIGHT - AD By - D IS T R E V IS IO N S 39 LTR D E S C R IP T IO N A2 1 . ASSEMBLY 2. T R U E P O S IT IO N T O L E R A N C E OR T H E P O S T T IP S

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT ~ 5 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. By - G REF. r / j 4.1 [.192] V_A_A_A D C 4-PLACES 2 .5 4 + 0 .0 8 [.1 00 + .003] TYP. TOLERANCE NON —CUMULATIVE i r J r ^ J r ^ J r > I ^ J L r r r B r 2 .5 4 + 0 .0 8

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - By - 6 3 5 2 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR A1 1. ASSEMBLY 2. T R U E P O SITIO N T O L E R A N C E IS H E L D F L A T A G A I N S T T H E 3\ T H E NOTED 4\ H O U S I N G :

Contextual Info: 7 T H IS DRAWING IS U N P U B L IS H E D . R ELEA SED FO R 5 6 4 3 PU BLIC A TIO N ALL RIGHTS R ESE R V ED . COPYRIGHT - n 2 By - LOC D IS T AD 00 REVISIONS LTR D E S C R IP T IO N A1 REVISED PER DATE DWN RK HMR 11 MAR 11 E C O - 1 1-00 4 8 2 0 APVD G REF

irg4pc50fd

Abstract: RG4PC30FD
Contextual Info: nternationol I G R Rectifier Pari IGBTs V - VCES Max.VcE on Collector-to-Emitter Voltage Colledor-lo-Emitlef Voltage (V) 00 Number £ N ffS •c Continuous Collector Current Tr =25°C T r=25°C (A) (A) h Fax Max. Power Dissipation (W) Demand Number on Xï vL )/

Contextual Info: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod­ uct family. Several arrays up to 700k cells cover all sys­ tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS

G2265E

Contextual Info: Temic MG2RT Semiconductors Radiation Tolerant 0.5-jim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured

MQFPL160

Contextual Info: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured