920 SMD TRANSISTOR Search Results

PD85006

Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

PD85006

Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

LDMOS transistor 1W

Abstract: J-STD-020B LET9060S PD57030S AN1294 smd transistor AO capacitor 0.1uf 500v
Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE

NV SMD TRANSISTOR

Abstract: AN1294 UHF rfid reader ma706
Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■

Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE

Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz

SMD TRANSISTOR L6

Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation

D2375

Abstract: BLF6G10S-45 RF35
Contextual Info: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

RF35

Abstract: BLF6G10S-45 TRANSISTOR SMD CODE 6.8 smd transistor f3 65
Contextual Info: BLF6G10S-45 Power LDMOS transistor Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

d2375

Abstract: BLF6G10S-45 RF35
Contextual Info: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

transistor smd LC 77

Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a

npn smd 3a

Abstract: power transistor Ic 4A datasheet NPN smd FZT1048A 5a SMD Transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1048A SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 VCEO = 17.5V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3

Contextual Info: Transistors IC SMD Type Product specification FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 40mÙ at 4A.

thermistor 100k

Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
Contextual Info: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,

7805 smd

Abstract: SMD DIODE gp 317 5Bp smd transistor 431 smd REGULATOR IC 7805 SMD 5Bp smd transistor data motorola j127 725 REGULATOR motorola 7805 motorola smd-transistor 5bp
Contextual Info: MOTOROLA Order this document by TP3005/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3005 The TP3005 is designed for 960 MHz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

BLT81

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC08b 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation

4894

Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

2222 730

Abstract: BLT81
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification Supersedes data of November 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.