930 DIODE SMD Search Results

Contextual Info: Transistors IC SMD Type Product specification 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A

930 18a diode smd

Abstract: 930 18a 2SK3641 930 diode smd
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A

Contextual Info: Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

SOD87 footprint

Abstract: implotec news melf zener diode smd smd schottky diode 82 sod87 Melf MiniMELF SMD Footprint IMPLOTEC SMD zener diode 203 philips zener diode bep zener diode smd
Contextual Info: 6224-02 Semicond Implotec Bro 5 20-12-2000 11:49 Pagina 1 Philips’ Implotec Philips Semiconductors is a leading innovator in both SMD and leaded packaging solutions, and boasts an impressive record in Philips’ Implotec™ pioneering solid glass encapsulation technologies.The Implotec range

Contextual Info: Diodes SMD Type High-speed diode BAS32L LL-34 Unit: mm Features Small hermetically sealed glass SMD package 1.50 1.30 2.64REF High switching speed: max. 4 ns 0.50 0.35 Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 75 V 3.60 3.30

Contextual Info: Product specification Philips Semiconductors High-speed diode BAS32L FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD

diode smd 270a

Abstract: smd transistor 3400 ld smd transistor smd transistor nc 61 KRF4905S mosfet, hexfet to-263 930 diode smd EAR20
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF4905S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 P-Channel Fully Avalanche Rated 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2

Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA1871 TSSOP-8 Features Unit: mm Can be driven by a 2.5-V power source Low on-state resistance RDS on 1 = 26 m TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 27 m TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 38 m TYP. (VGS = 2.5 V, ID = 3.0 A)

BAS32L

Contextual Info: BAS32L HIGH SPEED DIODE FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching • Fast Logic Applications

BAS32L

Contextual Info: BAS32L HIGH SPEED DIODE FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching • Fast Logic Applications

BAS32L

Contextual Info: BAS32L HIGH SPEED DIODE LL-34 Cathode band FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching

BAS32L

Contextual Info: BAS32L HIGH SPEED DIODE FEATURES • Small hermetically-sealed glass SMD package • High switching speed • Continuous reverse voltage • Repetitive peak reverse voltage • Repetitive peak forward current APPLICATION • High-Speed Switching • Fast Logic Applications

Contextual Info: Product specification BAS32L LL-34 Unit: mm Features Small hermetically sealed glass SMD package 1.50 1.30 2.64REF High switching speed: max. 4 ns 0.50 0.35 Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 75 V 3.60 3.30 Repetitive peak forward current:max. 450 mA.

2SK3570

Abstract: 930 diode smd
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode

ZENER DIODE 5.1V

Abstract: CAPACITOR 33PF DB-55035S-930 SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S
Contextual Info: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1

Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

PD55035S

Contextual Info: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1

Contextual Info: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

TRANSISTOR SMD MARKING CODE 1 KW

Contextual Info: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

55035

Abstract: 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S PD55035 930 diode smd
Contextual Info: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1

DAN202K

Contextual Info: DAN202K Data Sheet Switching Diode DAN202K Dimensions Unit : mm Applications Ultra high speed switching Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) High reliability 2.9±0.2 各リードとも Each lead has same dimension

DAN217

Contextual Info: Data Sheet Switching diode DAN217 Features 1 Small mold type. SMD3) 2) High reliability ＋0.1 0.15－0.06 ＋0.2 2.8±0.2 0.95 1.6－0.1 (3) 2.4 2.9±0.2 各リー ドと も ＋0.1 同lead 寸法has same dimension 0.4 －0.05 Each Land size figure (Unit : mm)

Contextual Info: Data Sheet Switching Diode DAN202K Applications Ultra high speed switching Dimensions Unit : mm Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) High reliability 2.9±0.2 各リードとも Each lead has same dimension 同寸法