930 MOTOROLA Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Low Voltage PLL C lock Driver The M PC 930 is a 3.3V com patible, PLL based clock driver device targeted for desktop PC applications. W ith output frequencies of up to 125M Hz and output skew s of 500ps the M P C 930 is ideal for the most

930 series dtl

Abstract: E1914 930 dtl a935 A1907 DTL 957 DTL 950 motorola A953 DTL 937 dtl 946
Contextual Info: MAXIMUM RATINGS Rating Value Supply Operating Voltage Range - Vcc DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These DTL integrated circuits provide an excellent balance of speed, power dissipation, and noise immunity for general purpose digital

930 dtl

Abstract: dtl 932
Contextual Info: MAXIMUM RATINGS Rating Value Supply Operating Voltage Range - Vcc DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These DTL integrated circuits provide an e xce lle nt balance of speed, power dissipation and noise immunity for general purpose digital

930 series dtl

Abstract: 830 dtl DTL 957 dtl 948 expandable dual 4 input NAND DTL 950 motorola flip-flop 948 A9611 DTL 937
Contextual Info: LANSDALE SEMICONDUCTOR 32E D • 5 3 b S fl0 3 □□□□355 5 HLTE T -43-01 MAXIMUM RATINGS Rating Supply Operating Voltage Range - Vcc DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These MDTL integrated circuits provide an excellent balance of

5 input nand gate

Abstract: DUAL 5 input nand gate D1911 d948 D 1914 930 series dtl
Contextual Info: lansdale semiconductor 17E D • S 3 L T Ô D 3 OQQGE'ifi fi ■ T -V 3-/.3 T-H5-23-DS T -5 / - / 9 T-V 6 -07-0-7 T-H6 - 0 7 -0 9 MAXIMUM RATINGS Rating Supply Operating Voltage Range - Vco DTL MOTOROLA INTEGRATED CIRCUITS 930 Series 830 Series These MDTL integrated circuits

802.3 CRC32

Abstract: QUANTA power sequence gmii phy CRC-32 MPC8260 MPC860 P802 PT280 QLPG3116-PT280C Gigabit Ethernet PHY
Contextual Info: QLPG3116 POS-PHY Level 3 Gigabit Ethernet Controller Data Sheet QLPG3116 Controller Data Sheet Rev. B Corporate Information Telephone:408 990 4000 US 416 497 8884 (Canada) 44 1932 57 9011 (Europe) 49 89 930 86 170 (Germany) 852 8106 9091 (Asia) 81 45 470 5525 (Japan)

MC9306

Abstract: MC830 MC130 MC930F MC830F MC930G MC930 Motorola MC830 Motorola MC833 MC830G
Contextual Info: M D T L M C 930/830 series EXPANDABLE DUAL 4-INPOT "NANO" GATE MC930F MC96IF MC830F, P MC861F, P EXPANDABLE DUAL 3-2 INPUT "NAND" GATE MC930G MC961G MC830G MC861G This gate element, in the 14-pin flat and dual in-line packages, consists of two expandable 4-input

MIPS r3000

Abstract: PowerPC 601 tx486 68EC020 AM386 68EC000 74F803 MPC950 R3000 R4000
Contextual Info: FEATURES 9 0 3 / 4 930 x 931 946 947 949 950 951 952 x 970 x 972 973 974 MOTOROLA M P C FAMILY MEMBERS 948 x x 980 x 990 991 992 x x x x On-Board Crystal Oszillator x x x x x x x x 8 x x x 14 x x x x 14 x x x 10 100 250 Differential PECL Reference Clock Input

Motorola MC833

Abstract: DSP56300 DSP56301 MC834 MC834F MC934 MC934F
Contextual Info: HEX IN V E R T E R > I MDTL M C 930/830 series MC934F • MC834F, P T his elem ent consists a t six inverter circuit:«. SW ITCHING TIM E T E S T C IR C U IT AN D W AVEFO RM S TEST tpd» Vd- R c 3 .9 k ohm * 3 0 pF 4 0 0 ohm« 6 0 pF m il- ' ' “ V * * *—

350 pf variable capacitor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

44F3360

Abstract: 93F2975
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

9601 TO 220

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

VIPer 32

Abstract: TO272
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030MBR1

Abstract: MRF9030MR1 100B7R5JP
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9030MBR1

Abstract: MRF9030MR1
Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

945 mosfet n

Abstract: 93F2975 c17 dual mos 9450 transistor 52169
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it

A113

Abstract: MRF9045MBR1 MRF9045MR1
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.

MRF9060MB

Abstract: 93F2975 A04T-5 a113 bolt c17 dual mos 95F786
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9045MBR1

Abstract: MRF9045MR1 6020G
Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

RF3-50

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

RF-35-0300

Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

MRF9045S

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices