FAST HIGH VOLTAGE DIODE 4000 V
Abstract: schneider
Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 931 SH 65T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten
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diode 2500A
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 931 SH 65T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten
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EigenschaftenDSH65
diode 2500A
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keller PA-21
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 931 SH 65T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten
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Untitled
Abstract: No abstract text available
Text: DF40-931 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current35 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)18 @Temp. (øC) (Test Condition)25
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DF40-931
Current35
Voltage600
Current100u
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Untitled
Abstract: No abstract text available
Text: BD40-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25
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BD40-931
Current50
Voltage400
Current100u
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Untitled
Abstract: No abstract text available
Text: BA41-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)20
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BA41-931
Current40
Voltage100
Current100u
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Untitled
Abstract: No abstract text available
Text: GF37-931 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)8.0
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GF37-931
Current25
Voltage600
Current100u
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Untitled
Abstract: No abstract text available
Text: GA37-931 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)8.0
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GA37-931
Current25
Voltage100
Current100u
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ba40 bridge
Abstract: BA40
Text: BA40-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25
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BA40-931
Current50
Voltage100
Current100u
ba40 bridge
BA40
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Untitled
Abstract: No abstract text available
Text: BL36-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)80 V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)5.0
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BL36-931
Current10
Current100u
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Untitled
Abstract: No abstract text available
Text: DA37-931 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current15 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)7.5 @Temp. (øC) (Test Condition)25
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DA37-931
Current15
Voltage100
Current100u
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Untitled
Abstract: No abstract text available
Text: NL37-931 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current30 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)15 @Temp. (øC) (Test Condition)25
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NL37-931
Current30
Current100u
urrent100u
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Untitled
Abstract: No abstract text available
Text: NY40-931 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current70 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)25
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NY40-931
Current70
Voltage50
Current100u
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BD36931
Abstract: BD36-931
Text: BD36-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)80 V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)5.0
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BD36-931
Current10
Voltage400
Current100u
BD36931
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Untitled
Abstract: No abstract text available
Text: BH41-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)20
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BH41-931
Current40
Voltage800
Current100u
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Dj37
Abstract: No abstract text available
Text: DJ37-931 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current15 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)7.5 @Temp. (øC) (Test Condition)25
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DJ37-931
Current15
Current100u
Dj37
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Untitled
Abstract: No abstract text available
Text: GB39-931 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)12
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GB39-931
Current35
Voltage200
Current100u
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Untitled
Abstract: No abstract text available
Text: NB39-931 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current50 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25 @Temp. (øC) (Test Condition)25
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NB39-931
Current50
Voltage200
Current100u
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Untitled
Abstract: No abstract text available
Text: CA37-931 Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current30 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)15 @Temp. (øC) (Test Condition)25
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CA37-931
Current30
Voltage100
Current100u
rrent100u
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Untitled
Abstract: No abstract text available
Text: CH40-931 Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current70 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)25
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CH40-931
Current70
Voltage800
Current100u
rrent100u
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100 N 37
Abstract: 931 Diode 37931 37741 diode DB 3 C DA741-931 diode 741 df diode 1003G DH741931
Text: «pack 931 » diode/thyristor modules d io d e /th y rïs fo r «pack 931 » THOMSON-CSF V RRM 'f s m / ' t s m Type« •g t Rq K = 1 WÎ 10 ms V 15 A / DY DA DB DD DF DH 37 37 37 37 37 37 931 931 931 931 931 931 30 A N/C N/C N/C N/C N/C N/C Y 37 A 37 B 37
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D68-269)
100 N 37
931 Diode
37931
37741
diode DB 3 C
DA741-931
diode 741
df diode
1003G
DH741931
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facon diode
Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
Text: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg
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345b2D3
T-23-0\
cb-200
741j37
cb-236
facon diode
40931
thyristor N 600 ch 14
CA 40931
ci 741
facon
741J
741 AMP
37741
1001dl
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cb 237
Abstract: 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j
Text: « pack 931» diode/thyristor 12 Amp m o d u les d io d e/th y risto r « p a c k 931 »12 A m p V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn O V RRM I r p e r leg @ p a r bras VR >GT RGK - 1 k n 125 °C V (A) (m A) (UA) (m A ) 50 100 200
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CB-200
741J37
CB-236
CB-200
CB-237
CB-335
CB-361
cb 237
1001dl
741 AMP
DB39-931
in 741 DIODE
CB-237
CB200
DH741931
ci 741
a 741 j
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BU931
Abstract: No abstract text available
Text: B U 931 BU931P HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPO LARTECHNOLO GY . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES APPLICATIONS . HIGH RUGGEDNESS ELECTRONIC IGNITIONS INTERNAL SCHEMATIC DIAGRAM C<, » I
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BU931P
SC06500
BU931
P003F
BU931
O-218
OT-93)
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