93C46 DIP Search Results

93c46 LN

Abstract: 93c46w 93c46 st
Contextual Info: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

Contextual Info: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

Contextual Info: & 93C46 Microchip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc, 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

IC 93c46

Contextual Info: & 93C46 M icrochip IK 64 X 16 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • The Microchip Technology Inc. 93C46 is a 1K bit serial Electrically Erasable PROM. The device memory is configured as 64 x 16 bits. Advanced CMOS technology

93C06 6

Abstract: 93C06 93C46X 200B 93C46 93C46T DS11179 93C46 national
Contextual Info: 93C06/46 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS CS 1 8 VCC CLK 2 7 NC DI 3 6 NC DO 4 5 VSS NC 1 8 NC VCC 2 7 V SS CS 3 6 DO CLK 4 5 DI 93C06 93C46 SOIC 93C06 93C46 • Low power CMOS technology

93c46

Abstract: tms1000 8051 interfacing with 93c46 93c46 6 93C46 dip instruction set and programming of 8096 memory 93C46 eeprom 93c46 93c46e 8051 interfacing to EEProm
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features ideal For Low-Density Data Storage Advanced CMOS EEPROM Technology — — — • Read/Write Non-volatile Memory

Contextual Info: 93C06/46 256 Bit/lK 5.0V CMOS Serial EEPROM PACKAGE TYPE FEATURES DIP • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

IC 93c46

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Advanced CMOS EEPROM Technology ■ Read/Write Non-volatile Memory — — — Single 5V supply operation 1,024 bits, 64 x 16 organization

93C46

Abstract: chip 8-pin 93C46 93C56 93c46 6 93C56 catalyst 93C66 93c56 14 pin
Contextual Info: CAT93C46/56/57/66/86 LEAD-FREE PACK AGE OPTION 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention

93c46 st

Abstract: 93C46 93C46 dip 93C46x memory 93C46
Contextual Info: 93C46 M icrochip IK 64 X 16 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES Low power CMOS technology 64 x 16 bit memory organization Single 5 volt only operation Self-timed ERASE and WRITE cycles Automatic ERASE before WRITE Power on/off data protection circuitry

93C46

Abstract: IC 93c46 93c46 6
Contextual Info: 4ÖM070? OOOüa^b S M I C 37E D INTERNATIONAL C M O S 71 INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Read/Write Non-volatile Memory — Single 5V supply operation

93CQ6

Abstract: 93c06 national semiconductor
Contextual Info: 93C06/46 M ic r o c h ip 256 Bit/1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES • Low power CMOS technology DIP • 16 bit memory organization - 16 x 16-bit organization 93C06 - 64 x 16-bit organization (93C46) • Single 5V only operation • Self-timed ERASE and WRITE cycles

Contextual Info: NM93C46 1024-Bit Serial EEPROM MICROWIRE Bus Interface General Description Features The NM 93C46 devices are 1024 bits of CM OS non-volatile electrically erasable m em ory divided into 6 4 1 6-bit registers. They are fabricated using Fairchild Sem iconductor's floating-gate CMOS

93C46SI

Abstract: 93C46 ST 93c86 93C46 dip 93C66 93C46 93C56 14 pin 93C86 93c46 st 93C56 catalyst 93C66
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz ■ 1,000,000 Program/Erase Cycles ■ 100 Year Data Retention ■ Low Power CMOS Technology

93C46SI

Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection ■ 1,000,000 Program/Erase Cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 Year Data Retention ■ Low Power CMOS Technology

93C56 14 pin

Abstract: 93C46 93C56 93C46 tssop 93C56 14 pins 93C46 dip chip 8-pin 93C66 93C86AN 93C46 DATASHEET 93C66
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology

93C06

Abstract: 93C46 93C46T 93C46X 93LC46 93C06 6
Contextual Info: M 93C06/46 ic r o c h ip 256 Bit/IK 5.0V CMOS Serial EEPROM PACKAGETYPE FEATURES • Low power CMOS technology DIP s C 1 8 □ Vcc CLK C 2 7 □ NC • 16 bit m emory organization - 64 x 16 bit organization 93C46 • Single 5 volt only operation DI C 3

93C46x

Abstract: 93C06 6 93C46T 93C46 602 93C46 dip chip 8-pin 93C46 SM 1628
Contextual Info: 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles • Automatic ERASE before WRITE

93c tssop

Abstract: 93C86
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation

93c66

Abstract: 93C86 01XXXXXXXXX
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology

93C56

Abstract: 93C56 14 pins 93C46SI
Contextual Info: CAT93C46/56/57/66/86 "GREEN" PACKAGES -Lead free 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention

93C46SI

Abstract: 93C46 93C56 14 pin 93C46 14 soic pin 93C46 dip 93C86 chip 8-pin 93C66 93C56 93C46S 93C46 tssop
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial E2PROM FEATURES • High Speed Operation: ■ Power-Up Inadvertant Write Protection ■ 1,000,000 Program/Erase Cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 Year Data Retention ■ Low Power CMOS Technology

Contextual Info: M ic r o c h ip 93C06/46 256 Bit/1K 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE • Low power CMOS technology • 16 bit memory organization - 6 x 16 bit organization 93C06 - 64 x 16 bit organization (93C46) • Single 5 volt only operation • Self-timed ERASE and WRITE cycles

93c46

Abstract: memory 93C46 93C46 tssop
Contextual Info: H CAT93C46/56/57/66/86 EE GEN FR ALO 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C46/56/57/66: 1MHz – 93C86: 3MHz ■ 100 year data retention