940 NM Search Results
940 NM Price and Stock
GALCO INDUSTRIAL ELECTRONICS 2940NMCord Grip, 1in.NPT, 0.310-0.560i |
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2940NM | 1 |
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ABLIC Inc. S-80940CNMC-G9AT2USupervisory Circuits 4.0V 1.2uA N-Ch Open |
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S-80940CNMC-G9AT2U | 2,970 |
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Hirschmann Electronics GmbH & Co Kg MAR1030-OTNNNNMMMMMMMMTTTTTTTTUnmanaged Ethernet Switches MAR1030-OTNNNNMMMMMMMMTTTTTTTT |
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MAR1030-OTNNNNMMMMMMMMTTTTTTTT |
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ABLIC Inc. S-80940CNMC-G9AT2GSupervisory Circuits Voltage Detector with External Delay, 1.1uA SOT-23-5 |
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S-80940CNMC-G9AT2G |
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Thomas & Betts 2940NMConduit Cord Connector; Thread Size:1" Npt; Cable Diameter Min:0.31"; Cable Diameter Max:0.56"; Cable Gland Material:Nylon 6 (Polyamide 6); Gland Colour:Black; Ip/Nema Rating:Not Rated; Product Range:-; Body Material:Nylon Rohs Compliant: Yes |Abb Thomas & Betts 2940NM |
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2940NM | Bulk | 10 |
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2940NM |
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940 NM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Phototransistors End Look Chip Part Nu mber Material Electrical & Optical Characteristics Wave length p nm Lens Colo r 940(400-1100) BPT-BP0314 940(400-1100) 940(400-1100) 940(400-1100) BPT-BP0334 940(400-1100) AMERICAN BRIGHT Max. Min. Max. 0.65 0.50 30 |
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BPT-BP0314 BPT-BP1314 BPT-BP2314 BPT-BP0334 BPT-BP1334 BPT-BP2334 | |
ML309
Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
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OCR Scan |
MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T 1-45a 1-45b ML309 M151 MI51T | |
Contextual Info: Phototransistors End Look Chip Part Nu mber Electrical & Optical Characteristics Wave length p nm Materi al BPT-BP0331 Si-Phototransistor 940(400-1100) BPT-BP1331 940(400-1100) (NPN) BPT-BP2331 940(400-1100) BPT-BP0931 Si-Phototransistor 940(750-1100) BPT-BP1931 |
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BPT-BP0331 BPT-BP1331 BPT-BP2331 BPT-BP0931 BPT-BP1931 BPT-BP2931 BPT-BP0A31 BPT-BP1A31 BPT-BP2A31 IR-09 | |
EL-23F
Abstract: EL1L2 EL23F EL-1L2
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OCR Scan |
EL-23F EL-302 EL-23F EL1L2 EL23F EL-1L2 | |
Contextual Info: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 Electrical & Optical Characteristics Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor BPT-NP13C1 940(400-1100) 940(400-1100) Si-Phototransistor BPT-NP13C2 940(400-1100) AMERICAN BRIGHT |
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BPT-NP03C1 BPT-NP13C1 BPT-NP23C2 BPT-NP13C2 BPT-NP03C2 BPT-NP23C1 | |
Emitter
Abstract: APG2C1-940
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APG2C1-940 APG2C1-940 Emitter | |
BPT-BP2334
Abstract: IR10
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BPT-BP0314 BPT-BP1314 BPT-BP2314 BPT-BP0334 BPT-BP1334 BPT-BP2334 BPT-BP2334 IR10 | |
BPT-BP0A31
Abstract: IR09 BPT-BP0331 BPT-BP2931 BPT-BP1A31
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BPT-BP0331 BPT-BP1331 BPT-BP2331 BPT-BP0931 BPT-BP1931 BPT-BP2931 BPT-BP0A31 IR09 BPT-BP2931 BPT-BP1A31 | |
BPT-BP0314
Abstract: npn 940 BPT-BP2334
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BPT-BP0314 BPT-BP1314 BPT-BP2314 BPT-BP0334 BPT-BP1334 BPT-BP2334 BPT-BP0314 npn 940 BPT-BP2334 | |
Contextual Info: ' I Case Type EmittingMaterial j ,W a ve ! Len9th j Apeak nm Angle of half sensitivity Case-colour Dimension Fig.-No. i L -9 32 P 3C 940 L-9 3 2 P 3 B T 940 blue-transparent L -5 3 P 3 C 940 water-clear 940 blue-transparent CO 3 mm O o 11 00 7 o0 water-clear |
OCR Scan |
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AEC-Q101-REV-C
Abstract: 4233
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JESD22-A114-E AEC-Q101-REV-C, AEC-Q101-REV-C 4233 | |
Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm |
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JESD22-A114-E AEC-Q101-REV-C, | |
SFH4233
Abstract: JS-001-2011
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JS-001-2011 AEC-Q101-REV-C, D-93055 SFH4233 JS-001-2011 | |
AEC-Q101-REV-C
Abstract: SFH4239
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JS-001-2011 AEC-Q101-REV-C, D-93055 AEC-Q101-REV-C SFH4239 | |
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BPT-NP23C1
Abstract: BPT-NP03C1 BPT-NP03C2 BPT-NP13C1 BPT-NP13C2 BPT-NP23C2 npn 940
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BPT-NP03C1 BPT-NP13C1 BPT-NP03C2 BPT-NP23C2 BPT-NP23C1 BPT-NP13C2 IR-13 BPT-NP23C1 BPT-NP03C1 BPT-NP03C2 BPT-NP13C1 BPT-NP13C2 BPT-NP23C2 npn 940 | |
Contextual Info: 2013-10-24 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4233 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm |
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JS-001-2011 AEC-Q101-REV-C, D-93055 | |
Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunkts-Wellenlänge 940 nm |
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JESD22-A114-E AEC-Q101-REV-C, | |
Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4233 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm |
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JS-001-2011; AEC-Q101-REV-C, | |
Contextual Info: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 BPT-NP13C1 Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor (NPN) BPT-NP23C1 940(400-1100) Water Clear 940(400-1100) BPT-NP03C2 BPT-NP13C2 Electrical & Optical Characteristics |
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BPT-NP03C1 BPT-NP13C1 BPT-NP23C1 BPT-NP03C2 BPT-NP13C2 BPT-NP23C2 | |
Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4233 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunkts-Wellenlänge 940 nm |
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JESD22-A114-E AEC-Q101-REV-C, | |
Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm |
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JS-001-2011; AEC-Q101-REV-C, | |
Contextual Info: Infrared Emitting Diodes nm Po TYP (mw) M I31T 940 1.7 20 1.6 20 Clear transparent M I31TA 880 1.5 20 1.8 20 Clear transparent M I32T 940 1.5 20 1.6 20 Clear transparent M I32TA 880 1.3 20 1.8 20 Clear transparent M I33T 940 4.0 20 1.6 20 Clear transparent |
OCR Scan |
I31TA I32TA -V1IB33T IB38T I51TA IB51T IB51TA IB57T-J IB57TA-J IB57T-K | |
Contextual Info: SMB1N-940-02 rev 1.1 22.01.2015 Description SMB1N-940-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 940 nm and radiation of 120 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin. |
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SMB1N-940-02 SMB1N-940-02 | |
Contextual Info: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED |
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L850/940/1050-40C00 L850/940/1050-40C 940nm) 1050nm) 1050nm 940nm 850nm |