9417 Search Results

AN-994

Abstract: IRLR3715 IRLU3715
Contextual Info: PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power VDSS RDS on max

IRF (10A) 55V

Abstract: IRF5Y3205CM 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94179A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y3205CM 55V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y3205CM 55V RDS(on) 0.022Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

MOSFET TSSOP-8 dual n-channel

Abstract: EIA-541 IRF7702 IRF7757
Contextual Info: PD - 94174 IRF7757 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Common Drain Configuration VDSS 20V Ω) RDS(on) max (mΩ) ID 35@VGS = 4.5V 40@VGS = 2.5V

Contextual Info: PD - 94178 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y3710CM 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y3710CM 100V RDS(on) 0.035Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94176C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597110 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF597110 100K Rads (Si) IRHF593110 300K Rads (Si) RDS(on) 1.0Ω ID -2.6A 1.0Ω -2.6A TO-39 International Rectifier’s R5 TM technology provides

IRHF593110

Abstract: IRHF597110
Contextual Info: PD - 94176C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597110 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF597110 100K Rads (Si) IRHF593110 300K Rads (Si) RDS(on) 1.0Ω ID -2.6A 1.0Ω -2.6A TO-39 International Rectifier’s R5 TM technology provides

marking 43a

Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS
Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

marking 43a

Abstract: IRF1010NL AN-994 IRF1010N IRF1010NS
Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

AN-994

Abstract: IRF2807L IRF2807S
Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 94170 IRF2807S IRF2807L Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 75V RDS on = 13mΩ G S Advanced HEXFET® Power MOSFETs from International

IRF5Y3710CM

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 94178 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y3710CM 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y3710CM 100V RDS(on) 0.035Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ G Advanced HEXFET ® Power MOSFETs from

AN-994

Abstract: IRL3714 IRL3714L IRL3714S
Contextual Info: PD - 94175A IRL3714 IRL3714S IRL3714L SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits

AN-994

Abstract: IRLR3715 IRLU3715 inductor footprint
Contextual Info: PD - 94177 SMPS MOSFET IRLR3715 IRLU3715 HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power VDSS RDS on max

AN-994

Abstract: IRL3714 IRL3714L IRL3714S
Contextual Info: PD - 94175A IRL3714 IRL3714S IRL3714L SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits

IRHF593110

Abstract: IRHF597110
Contextual Info: PD - 94176B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597110 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF597110 100K Rads (Si) IRHF593110 300K Rads (Si) RDS(on) 1.0Ω 1.0Ω ID -2.6A -2.6A TO-39 International Rectifier’s R5TM technology provides

Contextual Info: PD - 94176 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597110 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHF597110 100K Rads (Si) IRHF593110 300K Rads (Si) RDS(on) 1.0Ω 1.0Ω ID -2.6A -2.6A TO-39 International Rectifier’s R5TM technology provides

25275

Contextual Info: TE X A S IN S T R { L I N / I N T F O T s D Ê| 0033=127 TELECOM CIRCUITS r 3 T-75-11-37 TCM2101/2 PCM REPEATER DECEMBER 1982 Features GND M • • • • • • • PCM Signal amplification Two ALBO taps High Q or Low Q clock extraction Decision time adjustment

Contextual Info: 242NQ030PbF Vishay High Power Products Schottky Rectifier, 240 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop RoHS • High frequency operation COMPLIANT • Guard ring for enhanced ruggedness and long term reliability

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Abstract: 9617
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6 pins IC cbe

Abstract: irca
Contextual Info: S VlïlBl OS D a ta S h eet SYMI3FW600 PCI to IEEE-1394 Host Bus Interface T he SYM13FW600 chip uses the Link Layer protocol o f the IEEE-1394 serial bus. It also provides direct m em o ry access DM A engines for h igh-perform ance data transfer an d a P eripheral

CELP RELP MELP Vocoder

Abstract: MELP 2400 AMBE-2000 AMBE-1000 AMBE software AMBE2000 AMBE-2000TM PC-2000 AMBE DTMF encoder vocoder lpc 10
Contextual Info: PC-2000 Vocoder Board User’s Manual Version 1.1 PC-2000™ Vocoder Board User’s Manual Version 1.1 PC-2000™ Vocoder Board User’s Manual Version 1.1 April, 2002 Copyright , 2002 Digital Voice Systems, Inc 234 Littleton Road Westford, MA 01886