94381E Search Results
94381E Datasheets Context Search
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Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. |
Original |
94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. | |
C-150
Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
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Original |
94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. C-150 IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V | |
IRF530S
Abstract: IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150
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Original |
94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD O-220AB O-262 AN-994. IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD C-150 |