9532 MOSFET Search Results

IRF9530

Abstract: IRF9530 mosfet F9530 diode 9532 IRF9530, IRF9530 P-channel power
Contextual Info: P-CHANNEL POWER MOSFETS IRF9530/9531/9532/9533 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

F9530

Abstract: 9533E IRF9530
Contextual Info: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated

f9530

Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
Contextual Info: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area

1rf9530

Abstract: IRF9530 IRF9530 mosfet IRF9531 L 9132 IRF9530* p-channel power MOSFET IRF9532 9133 1RF953 IRFP9131
Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D IR F 9 5 3 0 /9 5 3 1 Z9 5 3 2 / 9 5 3 3 I R F P 9 1 3 0 /9 1 3 1 /9 1 3 2 /9 1 3 3 j • T T b H l H E D D I S E S M Ö D 1! P-CHANNEL POWER MOSFETS FEATU RES • • • • • • • TO-220 Lower R d s o n

EIA-541

Abstract: IRF7702 IRF7754
Contextual Info: PD - 94224 IRF7754 HEXFET Power MOSFET l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package l VDSS RDS on max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V -3.9A -4.6A Description TSSOP-8 Absolute Maximum Ratings

EIA-541

Abstract: IRF7751
Contextual Info: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier

EIA-541

Abstract: IRF7702 IRF7756 60v 10KHz ir MOSFET
Contextual Info: PD -94159 IRF7756 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V ±4.3A 0.087@VGS = -1.8V ±2.2A

EIA-541

Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
Contextual Info: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier

EIA-541

Abstract: IRF7702 IRF7754
Contextual Info: PD - 94224 IRF7754 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V -3.9A

diode code yw

Abstract: IRF7702 IRF7706 9532 mosfet
Contextual Info: PD -94003 IRF7706 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 22mΩ@VGS = -10V 36mΩ@VGS = -4.5V -7.0A -5.6A Description HEXFET® Power MOSFETs from International Rectifier

MOSFET TSSOP-8 dual n-channel

Abstract: EIA-541 IRF7702 IRF7757
Contextual Info: PD - 94174 IRF7757 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Common Drain Configuration VDSS 20V Ω) RDS(on) max (mΩ) ID 35@VGS = 4.5V 40@VGS = 2.5V

Contextual Info: PD - 94001A IRF7705 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS Ω) RDS(on) max (mΩ) ID -30V 18 @VGS = -10V 30 @VGS = -4.5V -8.0A -6.0A Description

Contextual Info: PD -93995 IRF7755 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 51mΩ@VGS = -4.5V 86mΩ@VGS = -2.5V -3.7A -2.8A Description HEXFET® Power MOSFETs from International Rectifier

diode 838

Abstract: ST 7702 irf 439
Contextual Info: PD - 94001 IRF7705 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 18mΩ@VGS = -10V 30mΩ@VGS = -4.5V -8.0A -6.0A Description HEXFET® power MOSFETs from International Rectifier

IRF7702

Abstract: IRF7755
Contextual Info: PD -93995A IRF7755 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 51mΩ@VGS = -4.5V 86mΩ@VGS = -2.5V -3.7A -2.8A Description HEXFET® Power MOSFETs from International Rectifier

EIA-541

Abstract: IRF7702
Contextual Info: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description RDS(on) max ID 0.014@VGS = -4.5V 0.019@VGS = -2.5V

IRF7702

Abstract: IRF7707
Contextual Info: PD -93996 IRF7707 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -20V 22mΩ@VGS = -4.5V 33mΩ@VGS = -2.5V -7.0A -6.0A Description HEXFET® Power MOSFETs from International Rectifier

IRF7702

Abstract: IRF7703
Contextual Info: PD - 94221 IRF7703 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS Ω) RDS(on) max (mΩ) ID -40V 28@VGS = -10V 45@VGS = -4.5V -6.0A -4.8A Description HEXFET® Power MOSFETs from International Rectifier

HEXFET SO-8

Abstract: MOSFET TSSOP-8 TSSOP-8 footprint EIA-541 IRF7702 IRF7756
Contextual Info: PD -94159A IRF7756 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -12V 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ±4.3A ±3.4A

Contextual Info: PD - 93849C IRF7702 PROVISIONAL HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS -12V 1 Description 2 HEXFET® 3 Power MOSFETs from International Rectifier

marking code YW DIODE

Abstract: IRF7606
Contextual Info: PD - 91264E IRF7606 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS(on) = 0.09Ω

IRF7700

Abstract: IRF7702 diode code yw
Contextual Info: PD - 93894A IRF7700 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS RDS(on) max ID -20V 0.015@VGS = -4.5V -8.6A 0.024@VGS = -2.5V -7.3A Description HEXFET® power MOSFETs from International Rectifier

Micro8 Package

Contextual Info: PD - 91264E IRF7606 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -30V RDS(on) = 0.09Ω

MARKING tAN SOT-23

Abstract: Lm 304 PN MARKING tAN SOT-23 diode diode smd yw diode SMD MARKING CODE yw l6302 smd SOT23 diode marking 2F st smd diode marking code ex st smd diode marking code "LE" smd diode marking LM
Contextual Info: PD - 9.1258B International TSR Rectifier IRLML2803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching