97 G TRANSISTOR IC Search Results

transistor gfs

Abstract: 2N5116 J176 2N3993 2N3993A IFP44 J174 J175 J177 P1086
Contextual Info: G 30 9-97 PJ99 Process SILICON JU N C T IO N FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, T s 10 mA +150°C -65°C to +175°C

LC-1

Abstract: SY SOT23
Contextual Info: "SuperSOT" SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 - APRIL 97 FEATURES * 625m W POWER DISSIPATION H ighest c u rre n t c a p a b ility SOT23 D a rlin g to n Very h igh hFE - sp e cifie d at 2A 5K m in im u m - ty p ic a lly 600 at 5A COM PLEM ENTARY TYPE - F M M T734

westinghouse transistors

Abstract: WT440 WT4311 WT4334 WT4411 WT4434 WT4400 Westcode Semiconductors transistor WT-440 WT transistor
Contextual Info: 97 0 99 55 WESTCODE SE MI CO ND UC TO RS iIESTCODL S E M I C O N D U C T O R S 34 34C 01 73 L DE”| t17Din S 5 D T~ DDD1731 □ |~ Technical W ESTCODE SEMICONDUCTORS Publication WT43/4400 Issue 1 A u g u st 1981 High Power Transistor Types WT4311 to W T4334 and WT4411 to WT4434

q2t2905

Contextual Info: TYPE Q2T2905 QUAD P-N-P SILICON TRANSISTOR B U L L E T I N N O . D L -S 7 3 1 1 7 0 2 , A P R I L 1 9 7 2 - R E V I S E D M A R C H 1 97 3 D ESIGN ED FOR MEDIUM-POWER SWITCHING AND G E N E R A L PURPOSE A M P LIFIER APPLICATIONS • High Breakdown Voltage Combined

2N1566

Contextual Info: TYPE 2N1566 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 731 1 9 5 8 , M A R C H 1 97 3 FOR G E N E R A L PURPOSE A M P L IF IE R APPLICATIO N S • V B R C E O • ■ - 6 0 V Mi n • hpE - . - 60 to 200 mechanical data •absolute maximum ratings at 2 5 °C free-air temperature (unless otherwise noted)

175-200MHZ

Contextual Info: MITSUBISHI RF POWER MODULE M67730L 175-200MHZ, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM P IN : P in RF INPUT <g VCC1 U t. DC SUPPLY 2 n d DC SUPPLY RF OUTPUT FIN @ VCC2 @PO ®GND ABSOLUTE MAXIMUM RATINGS Tc = 2 5 unless otherwise noted) Symbol Vcc Icc

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

TC9312N

Abstract: ic 763 transistor 17609 transistor 7721 17610 TA7780BN IPL30 T-77 Q45 IC transistor sb 7721
Contextual Info: TOSHIBA-, ELECTRONIC 02 9 09 724 7 TOSHIBA. i>Ë| 10=17247 D017bDl H |~~ ELECTRONIC 02E 1 176 Öl : - D T - 7 7 -21 TA7780BN MECHANISM DRIVER FOR IC LOGIC CONTROL Unit in mm The TA7780BN is a mechanism driver IC designed for IC logic control, which is especially suitable for

SG2844D

Abstract: SG1844 SG1845 SG3844 SG3844N SG3845N nc 555 analog data*book 1r2 1845
Contextual Info: LIN D O C #: 1844 SG1844/SG1845 Series CURRENT MODE PWM CONTROLLER T H E I N F I N I T E P O W E R I O F P N N O VA T I O N R O D U C T I O N DESCRIPTION The SG1844/45 family of control ICs provides all the necessary features to implement off-line fixed frequency,

TRANSISTOR C 557 B

Abstract: TRANSISTOR N3
Contextual Info: Non-Pulse M odulated Features • E a s y o p e ra tio n m o n ito r in g w ith red L E D in d ic a to r ■ R e s p o n s e fre q u e n c y as h ig h a s 1 K H z ■ W id e o p e ra tin g v o lta g e , 5 -2 4 V D C ■ A m p lifie r o u tp u t ca n be c o n n e c te d d ire c tly to P L C , T T L a n d re lays

Contextual Info: E R IC SSO N í PTB 20193 60 Watts, 1 . 8 - 1 . 9 GHz Cellular Radio RF Po we r Transistor D escription The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP

DIL28

Abstract: circuit diagram for 3 wire transducer inductive sensor oscillator circuit AM337 AM337-1 AM337-2
Contextual Info: SWITCHING INTERFACE IC AM337 FEATURES GENERAL DESCRIPTION • Wide Supply Voltage Range 2.1V 9V to 35V • 3 (4)–Wire and 2–Wire Applications • Simultaneous Outputs NO and NC • 1 Point and 2 Point Switch • PNP– and NPN–Type Available • Three Comparators for Switch and

bel187

Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
Contextual Info: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ

bfy90

Contextual Info: BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB typ @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 • 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz

TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Contextual Info: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as

bms 97

Abstract: 37265
Contextual Info: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain |s21f =18.5 dB at 1.8 G H z appl.1 Gain |s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)

Contextual Info: Tem ic U4254BM S e m i c o n d u c t o r s Low-Noise AM/FM Antenna Impedance Matching IC Description The U4254BM is an integrated low-noise AM/FM antenna impedance matching circuit in BICMOS technology. The device is designed in particular for car application and is suitable for windscreen and roof

transistor k 385

Abstract: IR2C36
Contextual Info: 7-Unit 500mA Transistor Array IR2C36 IR2C36 7-Unit 500mA Transistor Array • Description Pin Connections The IR 2 C 3 6 is a 7 -circuit d rive r IC. Incorporat­ ing an overshort preventive clamp diode for out put, this transistor a rra y can d irectly d rive an in ­

smd transistor marking A10

Abstract: qml-38534 5962-9562408HNC smd transistor marking A11 smd transistor marking A14 TRANSISTOR SMD MARKING CODE a7 j smd transistor marking A18
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added note to paragraph 1.2.2 and table I regarding the 4 transistor design. Paragraph 1.3; changed the power dissipation for device types 05-09 from 2.9 W max to 3.3 W max. Table I; changed the ICC max limit

ge traction motor

Contextual Info: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23659)

automotive ignition tip162

Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.

ST T4 3580

Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc

2SC2932

Abstract: RF POWER TRANSISTOR NPN R27 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T YP E DESCRIPTION 2 S C 2 9 3 2 is a s ilic o n NPN e p ita x ia l p la n a r ty p e tra n s is to r spe­ OUTLINE DRAWING D im e n s io n s in m m c if ic a lly designed fo r p o w e r a m p lifie rs a p p lic a tio n s in 8 0 0 —9 4 0

tip122 tip127 audio amp

Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc