98ASA99191D Search Results

TO272

Contextual Info: F R E E S C A L E SEMICONDUCTOR, ALL R I GH TS RESERVED. TITLE: INC. TO— 272 2 LEAD MECHANICAL OUTLINE PRINT VERSION NOT TO SCALE DOCUMENT NO: 98ASA99191D REV: E CASE NUMBER: 1337-04 10 SEP 2007 STANDARD: JEDEC TO-272 BC VIEW Y - Y © F R E E S C A L E SEMICONDUCTOR,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1

Resistor mttf

Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB

MRFE6S9045NR1

Abstract: ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9045NR1

B10T

Abstract: multicomp chip resistor 911 atc100b6r2 ATC200B104 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 4, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large - signal output and driver applications with

ATC100B910

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with

250GX-0300-55-22

Abstract: ATC100B102JT50XT B10T 1812SMS-82NJ ESMG 2743021447 atc100b6r2 MRF6V2010N MRF6V2010NB MRF6V2010NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V2010NR1 MRF6V2010NBR1 Designed primarily for CW large-signal output and driver applications with

MRFE6S9045

Abstract: PCN12 A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRFE6S9045NR1
Contextual Info: Freescale Semiconductor Technical Data MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9045NR1 MRF6S9045NBR1 N - Channel Enhancement - Mode Lateral MOSFETs

MRF6S9060NBR1

Abstract: C1547 A114 A115 C101 JESD22 MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1 ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 RF Power Field Effect Transistors MRF6S9060NR1 MRF6S9060NBR1 N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with