991027TM2FXHD Search Results
991027TM2FXHD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CPH6304 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
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CPH6304 --10V --15V 991027TM2fXHD | |
RL66Contextual Info: CPH6351 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH6351 --10V 991027TM2fXHD RL66 | |
marking KCContextual Info: CPH6303 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage |
Original |
CPH6303 --10V 991027TM2fXHD marking KC |