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    9GHZ TRANSISTOR Search Results

    9GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE 16

    Abstract: TRANSISTOR SMD catalog Marking Code SMD transistors MARKING SMD npn TRANSISTOR R SMD transistor code 132 "Philips Semiconductors" Catalog SMD MARKING CODE transistor smd marking CT1 transistor smd tv T R TRANSISTOR SMD MARKING CODE
    Text: Philips Semiconductors: Product information on BFG540; BFG540, X; BFG540, XR, NPN 9GHz wideband transistor Select & Go. Go to Catalog & Start Information as of 2000-11-05 Catalog by Function Discrete semiconductors Audio Clocks and Watches Data communications


    Original     		PDF BFG540; BFG540, BFG540 BFG540/XR BFG540/XR TRANSISTOR SMD MARKING CODE 16 TRANSISTOR SMD catalog Marking Code SMD transistors MARKING SMD npn TRANSISTOR R SMD transistor code 132 "Philips Semiconductors" Catalog SMD MARKING CODE transistor smd marking CT1 transistor smd tv T R TRANSISTOR SMD MARKING CODE

    optical receiver -25dbm 10ghz

    Abstract: photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716
    Text: 19-1970; Rev 2; 1/02 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at 3.3V Supply ♦ 1.1µARMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAP-P Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, 150mW -18dBm 00V/A MAX3970U/D OC-192 345mm) 864mm) optical receiver -25dbm 10ghz photodiode germanium Photodiode, 10ghz RF TRANSISTOR 10GHZ low noise Germanium Amplifier Circuit diagram transistor 9716

    transistor 9716

    Abstract: photodiode 10Ghz PIN
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN

    germanium photodiode PIN

    Abstract: photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz
    Text: 19-1970; Rev 0; 3/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, 150mW -18dBm 90V/A MAX3970U/D OC-192 345mm) 864mm) germanium photodiode PIN photodiode 10Ghz PIN BP11 BP13 MAX3970 TIA 100G Photodiode, 10ghz

    transistor 9716

    Abstract: photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11
    Text: 19-1970; Rev 1; 10/01 10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI Features ♦ 150mW Power Dissipation at +3.3V Supply ♦ 1.1µA RMS Noise -18dBm Sensitivity ♦ 9GHz Bandwidth ♦ 2mAp-p Input Overload ♦ Received-Signal Strength Indication


    Original     		PDF 10Gbps, MAX3970 10Gbps 90V/A -18dBm 150mW MAX3970 345mm) transistor 9716 photodiode 10Ghz PIN bp-15 0.25pF BP-17 HFAN11

    asics

    Abstract: AN646 APP646 OC48 asic chips
    Text: Maxim > App Notes > ASICs Keywords: ASICs, QuickChip, RF, semicustom, custom, HF, asic, RF ASICs, quick chip, semi-custom, fullcustom Mar 13, 2000 APPLICATION NOTE 646 Semicustom QuickChip ASICs Implement RF Functions to 9GHz Abstract: Maxim has two different approaches for developing HF ASICs: a semi-custom QuickChip design


    Original     		PDF com/an646 AN646, APP646, Appnote646, asics AN646 APP646 OC48 asic chips

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    pll 9ghz vco

    Abstract: PLL IC SCHEMATIC APP635 9ghz transistor RF TRANSISTOR 9GHZ
    Text: Maxim > App Notes > ASICs SIGNAL GENERATION CIRCUITS WIRELESS, RF, AND CABLE Keywords: silicon bipolar, PLL, integrated circuit, IC, Maxim, GST-2, QuickChip, ASIC, broadband pll Mar 27, 2001 APPLICATION NOTE 635 QuickChip Design Example 1 - A Silicon Bipolar Broadband PLL


    Original     		PDF 16-pin com/an635 AN635, APP635, Appnote635, pll 9ghz vco PLL IC SCHEMATIC APP635 9ghz transistor RF TRANSISTOR 9GHZ

    rf transistor 6ghz 1w

    Abstract: TC2571 TC1501
    Text: TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation


    Original     		PDF TC2571 TC2571 TC1501 rf transistor 6ghz 1w

    gl 7445

    Abstract: 15564 TC2676
    Text: TC2676 REV4_20070906 2 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT l 2 W Typical Output Power at 6 GHz l 9 dB Typical Linear Power Gain at 6 GHz l High Linearity: IP3 = 43 dBm Typical at 6 GHz l High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz


    Original     		PDF TC2676 TC2676 TC1606 gl 7445 15564

    ECG009

    Abstract: C100 MCH185A560JK E4432B 60-000346-000B SS 1091
    Text: PRELIMINARY DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 C100 MCH185A560JK E4432B 60-000346-000B SS 1091

    9-GHz

    Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
    Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 9-GHz TOP MARKING C1 ROHM C100 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm

    ROHM SOT89 MARKING

    Abstract: ECG009B-1000 ECG009 311 SOT89
    Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features „ Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 ROHM SOT89 MARKING ECG009B-1000 311 SOT89

    Untitled

    Abstract: No abstract text available
    Text: Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage 8-10V Operation MSAG Process


    Original     		PDF MAAPGM0079-DIE MAAPGM0079-DIE

    NEC 10F

    Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
    Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.


    OCR Scan     		PDF devic87 P12647EJ3V0PF00 NEC 10F low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book

    sanyo tv tuner

    Abstract: 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4401 2SC4402 2SC4403 2SC4405 2SC4406
    Text: SA/Im VERY HIGH-FREQUENCY TRANSISTOR SERIES Ifcl Use * * * * Wide-band amplifiers UHF.VHF TV tuners CATV converters RF modulators ( )=Marking on MCP. CP, PCP. For PNP, (-)sign is omitted. P C : ( P a c k a g e :PCP) Mounted on PCB ( 2 50mm!X0. 8mm) Features *


    OCR Scan     		PDF 250mm 2SC4401 2SC4402 2SC4403 2SC3776 2SC3777 2SC3778 2SC3779 QD24b07 MT980615TR sanyo tv tuner 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4405 2SC4406

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1949B i S A \Y O No.l949B _ 2SC3776 NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amp, _ Wide-Band Amp Applications i Applications . UHF frequency converters, band amplifiers local oscillators,


    OCR Scan     		PDF 1949B l949B 2SC3776 5318M0/5137KI/0185KI

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1954C SA WO _ 2SC3779 No.l954C NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NFrl.5dB typ f=0.9GHz .


    OCR Scan     		PDF 1954C 2SC3779 l954C 200MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz


    OCR Scan     		PDF 900MHz BFG196 Q62702-F1292 OT-223 900MHz

    transistor kt 925

    Abstract: 2SC4365 2SC4072
    Text: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.


    OCR Scan     		PDF 250mm racteristics/Ta-25 MT930617TR transistor kt 925 2SC4365 2SC4072

    2SC3774

    Abstract: No abstract text available
    Text: Ordering number: EN 1 94 78 2SC3774 NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers, wide-band amplifiers Features . Small noise figure: NF=2.2dB typ f=0.9GHz . . High power gain: MAG=l4dB typ(fs0.9GHz).


    OCR Scan     		PDF 2SC3774

    1951B

    Abstract: 2SC3778
    Text: Ordering num ber:EN 1 951B _ N 0. I 9 5 I B 2SC3778 NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifieres,wide-band amplifiers Features . Small noise figure: NFs2.2dB typ f=0.9GHz .


    OCR Scan     		PDF 1951B 1951B 2SC3778 MAG-14dB lS21ep 10VfIc 1951-VH

    2sc377

    Abstract: No abstract text available
    Text: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.


    OCR Scan     		PDF 250mm 2SC3771 2SC3772 2SC3773 2SC377 2SC3775 2SC4269 2SC4270 2SC4364 2SC4365

    2SC3779

    Abstract: U40j 2SC3779 transistor
    Text: Ordering number : EN 1954C 2SC 3779 NPN Epitaxial Planar Silicon Transistor S A \ Y O i UHF Low-Noise Amp, Wide-Band Amp Applications Applications . OHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NF=1.5dB typ f=0.9GHz . . High power gain: MAG*l4dB typ(f=0.9GHz).


    OCR Scan     		PDF 1954C 2SC3779 SC-51 rO-92 3C-43 2SC3779 U40j 2SC3779 transistor