9W POWER SUPPLY Search Results

RFHA1006

Abstract: 0906-4K LQG11A47NJ00
Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

EC 401 TRANSISTOR

Abstract: Gan hemt transistor RFMD transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

RFHA

Abstract: LQG11A47NJ00
Contextual Info: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

transistor 1800MHz

Abstract: r.f. amplifier 30mhz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

rf3826

Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

404j

Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

RFHA1003S2

Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

RFHA1003SQ

Abstract: 30MHz to 512MHz
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Gan hemt transistor RFMD

Abstract: DS111007 tl 4941
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

TRIPATH TECHNOLOGY

Abstract: TAA2009 AA2009 Tripath Amplifier EB-TAA2009 TRIPATH TA2024 TA2024 application note capacitor 100uF/16V TRIPATH TA2024
Contextual Info: Tripath Technology, Inc. - Technical Information TAA2009 STEREO 9W 8Ω CLASS-T DIGITAL AUDIO AMPLIFIER USING DIGITAL POWER PROCESSING™ TECHNOLOGY TECHNICAL INFORMATION Revision 1.02 – May 2006 GENERAL DESCRIPTION The TAA2009 is a 9W/ch continuous average two-channel Class-T Digital Audio Power Amplifier IC

Contextual Info: NEZ7177-8D C-BAND POWER GaAs MESFET NEZ7177-4D NEZ7177-4DD OUTPUT POWER AND EFFICIENCY vs. INPUT POWER FEATURES HIGH P o u t 9W 39.5 dBm Typ PidB for NEZ7177-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ7177-4D/4DD HIGH EFFICIENCY 33% TlADD for 4.5W Device 31% tiadd for 9W Device

NICHICON UD

Abstract: TA2024B panasonic plasma tv circuit diagram motorola .5w zener diodes nichicon 22H UD potentiometer 5k ohm pcb mount Panasonic FM series 2.2uF 10V electrolytic capacitor TAA2008 MBRS130T3
Contextual Info: Tri path Technol og y, I nc. - Techni cal I nformation TAA2008 STEREO 9W 8Ω CLASS-T DIGITAL AUDIO AMPLIFIER USING DIGITAL POWER PROCESSING™ TECHNOLOGY TECHNICAL INFORMATION Revision 1.0 – May 2006 GENERAL DESCRIPTION The TAA2008 is a 9W/ch continuous average two-channel Class-T Digital Audio Power Amplifier IC

NICHICON UD

Abstract: TAA2008 AES17 EB-TAA2008 MBRS130T3 TA2024B TRIPATH TA2024B sustain circuits for plasma tv panasonic plasma tv circuit diagram
Contextual Info: Tri path Technol og y, I nc. - Techni cal I nformation TAA2008 STEREO 9W 8Ω CLASS-T DIGITAL AUDIO AMPLIFIER USING DIGITAL POWER PROCESSING™ TECHNOLOGY TECHNICAL INFORMATION Revision 1.1 – September 2006 GENERAL DESCRIPTION The TAA2008 is a 9W/ch continuous average two-channel Class-T Digital Audio Power Amplifier IC

power supply DVD schematic diagram

Abstract: TNY267P DVD TNY267P DVD power supply EE25L dvd board china DVD player power circuit diagram EEL25 equivalent mm to awg magnet wire TNY267
Contextual Info: Design Example Report Title 9W power supply using TNY267P Input: 85 – 265 VAC Specification Output: 5V/0.56A, 3.3V/0.48A, 12V/100mA, -12V/15mA, -22V/100mA, Floating 4V/100mA Application DVD Player Author Power Integrations Applications Department Document

power supply DVD schematic diagram

Abstract: TOP267 TDK Y-CAP TNY267P TNY267P DVD KMG10VB100M TNY267 DVD power supply KMG50VB10M power supply dvd player china
Contextual Info: Design Example Report Title 9W power supply using TNY267P Input: 85 – 265 VAC Specification Output: 5V/0.75A, 3.3V/0.5A, 12V/100mA, -12V/10 mA, -23V/10 mA, Floating 3V/100 mA Application DVD Player Author Power Integrations Applications Department Document

cha7215

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power

x-Band High Power Amplifier

Abstract: CHA7215
Contextual Info: CHA7215 X-band High Power Amplifier GaAs Monolithic Microwave IC Vg3 Description Vd3 Vd2 The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 36% power added efficiency at

RFHA1003S2

Contextual Info: RFHA1003 RFHA1003 9W GaN Wide-Band Power Amplifier 30MHz to 512MHz The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density

transistor 1800MHz

Contextual Info: RF3826 RF3826 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium