9Y TRANSISTOR Search Results

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors IMX17 •F e a tu re s •E x te r n a l dim ensions (Units: mm) 1) T w o 2 S D 1 4 8 4 K c h i p s i n a n S M T package. 2) 1.9±0.2 |!o-9y.95j tom atic mounting m achine. 3 ) T ransistor e le m e n ts a re in d e p e n ­

2SC783

Abstract: 2SA483 LBA-05 toshiba 2sc783 AC74
Contextual Info: 2SA 483 o SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR mmmfa&tim o P ow er A m p lif ie r A p p lic a tio n s o V e r t i c a l O u tp u t A p p l i c a t i o n s : v ciilO — -1 5 0 V 2 SC783 i «*•*!• T T * m 9y * U n it Hi - in mm F i T ^ 7 ' loow > 300w

9y transistor

Abstract: ac42 npn 1000V 15A 2SC2122 TRANSISTOR NPN 8A 800V AC42C NPN Transistor VCEO 1000V 2SC2122A CI 834
Contextual Info: S /U D ^N P N ZS & IK ^t SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR r 2 sc 2122 2 s c 2122A Unit in mm 02&OUAX. O 4 ? 9-y o TV Ho riz ont al Out pu t and Hi gh Power S wi tc hin g App lic at ion s • ¡SStflET-t; VcBO=!OOOV 2SC3122A 8 0 0 V , (28C21Z2)

transistor itt 973

Contextual Info: , L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC943 NPN h 7 V $/ /NPN SILICON EPITAXIAL TRANSISTOR Frequency Amplifier Use ft ^/FEATURES WB0/PACKAGE DIMENSIONS (Unittmm) •MtEtr-fo V C E O :40V, V E Bo'-8.0V

sje transistor

Abstract: 2SC195 2SC1959-Y sft 43 2SC19 2SC1959 9y transistor
Contextual Info: Jo y N P N i& ïs / p m h ^ y s tw p c T jjX .ICON NPN EPITAXIAL TRANSISTOR E L E C T R IC A L C H A R A C T E R IS T IC S x- i s i j S S y * t l L L i e i + M M * 0t l W, n ) ? . * N o te -> i • x ì » y fik /¿A I EBO Ve B= 5V , - - 1.0 hF E l) Vq e= l v .

FHT8550Y

Abstract: 9y marking fht8550g
Contextual Info: ࢅຫ৖ൈहࡍྯ૵਌ Low Frequency Power Amplifier Transistors FHT8550 Low Frequency Power Amplifier Transistors ࢅຫ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Suitable for Driver Stage of Small Motor 小馬達驅動 Complementary to FHT8050 與 FHT8050 互補

FHT8550Y

Abstract: fht8550g FHT8550
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHT8550 FEATURES 特点

XP6543

Abstract: 25CT5A 9y transistor
Contextual Info: Composite Transistors Panasonic XP6543 Silicon NPN epitaxial planer transistor Unit: mm For low frequency amplification • Features • • High transition frequency fT. Two elements incorporated into one package. ■ Basic Part Number of Element • 2SC3904 x 2 elements

FHR8550Y

Abstract: FHR8550 FHR8550G FHR8550O 9y marking 9G SOT-89
Contextual Info: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors 低频功率放大三极管 PNP Silicon FHR8550 FEATURES 特点

XN6543

Abstract: 2SC3904 9y marking NPN
Contextual Info: Composite Transistors XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification 2GHz band 2.8 –0.3 +0.25 1.5 –0.05 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of

diode t25 4 HO

Contextual Info: 3GE 1 ' D • 7 ^ 2 3 7 OOB'Hö? SCS-THO M SO N ;ILII gW BB(Si b ■ s6 SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP358 • • • • Voss 50 V ^ D S (o n 0.3 n 7 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING

9y transistor

Contextual Info: Composite Transistors XP06543 Silicon NPN epitaxial planar transistor 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)

2SC3904

Abstract: XP06543
Contextual Info: Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm 0.425 For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is separated)

9y transistor

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ • High transition frequency fT • Two elements incorporated into one package (Each transistor is

2SC3904

Abstract: XP06543
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 5 0.12+0.05 –0.02 4 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SC3904

Abstract: XN06543 XN6543
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SC3904

Abstract: XN06543 XN6543
Contextual Info: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10

9y transistor

Abstract: 2SC3904 XP06543
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06543 Silicon NPN epitaxial planar type 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm (0.425) For low noise amplification 0.2±0.05 1 5˚ ue pl d in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

9y marking

Abstract: 2SC3904 XN06543 XN6543
Contextual Info: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification (2GHz band) 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage

9y marking

Abstract: 2SC3904 XN06543 XN6543
Contextual Info: Composite Transistors XN06543 XN6543 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3904 x 2 elements ■ Absolute Maximum Ratings 0 to 0.1 ● (Ta=25˚C) Parameter

je240

Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
Contextual Info: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON

2SC3904

Abstract: XN06543 XN6543
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05

TRANSISTOR SUBSTITUTION 1993

Abstract: volterra VOLTERRA VT c1e2 hp8566A BFR520 CT-20 ED-11 TRANSISTOR SUBSTITUTION BFR520 transistor
Contextual Info: IEEE JOURNAL ON SOLID-STATE CIRCUITS, VOL. 31, NO. 1, JANUARY 1996 114 Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model Leo C. N. de Vreede, Henk G. de Graaff, Koen M outhaan, Student M em ber, IEEE, M arinus de Kok, Joseph L. Tauritz, M ember, IEEE, and Roel G. F. Baets, M ember, IE E E