A0220 Search Results

Contextual Info: Protection Relays & Controls ARC Detectors A0220 Description Arc Detecting Point Sensor The A0220 Arc Detector is a photo electric sensor. It has a sensitive area of 180˚. Sensor signal is a mA current signal of 0.5 mA / klux. The sensor includes 10 m of shielded

7408, 7404, 7486, 7432

Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
Contextual Info: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers

VN10K

Contextual Info: VN10K Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN10K 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

2N7000

Contextual Info: 2N7000 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7000 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TN2124

Contextual Info: TN2124 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2124 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

HY53C464LS

Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
Contextual Info: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

Contextual Info: bulgin a brand of Elektron Technology Mains Filters Designed to reduce conducted mains borne EMI, this extensive range provides many solutions to EMI problems. To meet individual design requirements the filters are available with two attenuation options –

A0100

Contextual Info: 65 & 100 Amp Filter Connector Female Power Connector ACARA ORDERING INFORMATION Crimp Termination Pre-wired Termination Part Number AFC065-PC/4AWG AFC065-PC/6AWG AFC065-PC/M25 AFC065-PC/M16 AFC100-PC/2AWG AFC100-PC/4AWG AFC100-PC/M35 AFC100-PC/M25 C/M25

3.5mm female 5 pole pcb mount

Abstract: Tyco PBT 007 298-08-01100 PM318MOOLSC Socket strip 2x3 0.1 inch 701-23-02107 PM208FOOLOO 701-13-02107 Tyco ELCON Drawer Series Connectors EMC 2309 power supply connector
Contextual Info: Anderson Power Products Index Anderson Power Products®, an ISO 9001:2000 certified company, is a world leader in the design and manufacture of quick-disconnect power connectors. Our connectors are rated from 30 amps to 450 amps and up to 250 or 600 volts, AC/DC and comply with major worldwide specifications. With over one hundred years of power connection

2N6660

Abstract: 2N6660-1
Contextual Info: 2N6660 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN0808

Contextual Info: VN0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN0808 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TN2130

Contextual Info: TN2130 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2130 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VP2106

Contextual Info: VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

434 289

Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
Contextual Info: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance

TSC500

Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
Contextual Info: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories

2n6661 bonding pad lay-out

Abstract: 2N6661
Contextual Info: 2N6661 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6661 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

2N7002 Die Specification

Abstract: 2N7002
Contextual Info: 2N7002 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7002 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VP2110

Contextual Info: VP2110 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2110 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

d46b

Abstract: k399 a06407 p935 a0540 7F39 q231 ML-ND M315 50436
Contextual Info:
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!"#$%&'(& A:7402+1O7,A0./-1234-0. N34+ P= !>@O7,A0./-1234-0. A0./-12+6,P= !1+<31+6,P= !"#$%&'#%&#()%"(*)#+(*,&-+./,)0. ,"CD@,JI@%,QNB,&CJA@$%A$RP'J$N,@%NSJ)Q@'D ,!'QTCIJ@%AISC)'@U'%CQBLBAB

A01103

Abstract: A020 Herotek A0105116A A0105216A A0105316A A0215115A herotek, a01202
Contextual Info: MINIATURE WIDEBAND RF AMPLIFIERS 0.1 – 2.0 GHz FEATURES • More Than One Octave Band Frequency Range • Small Size With Removable Connectors for Drop-In Integration • Low Power Consumption Options • Flat Gain Response • Internal Regulator Circuit for Unregulated Power

HY53C464LS

Abstract: LASCR HY53C464S HY53C464 MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70
Contextual Info: HY53C464 Series »HYUNDAI 64K X 4-bit CMOS DRAM DESCRIPTION The HY53C464 is feist dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

DN3145

Contextual Info: DN3145 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) DN3145 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

2N7008

Contextual Info: 2N7008 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7008 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN2106

Contextual Info: VN2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain