AGR26045EF Search Results

AGR26045EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
AGR26045EF		Agere Systems	45 W, 2.535 GHz-2.655,N-Channel E-Mode, LATERAL MOSFET		Original	PDF	221.58KB	10
AGR26045EF-DB		Agere Systems	MOSFET		Original	PDF	221.58KB	10

AGR26045EF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
21045F Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645 Contextual Info: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26045EF AGR26045EF ACGR26045EF AGR26045XF 21045F 12-digit 21045F J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645	PDF
Contextual Info: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26045EF	PDF
AGR26045EF Abstract: J500 JESD22-C101A Contextual Info: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26045EF AGR26045EF po8109-9138 DS04-226RFPP DS04-110RFPP) J500 JESD22-C101A	PDF
AGERE Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A Contextual Info: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26045E AGR26045E AGR26045EU AGR26045EF PB04-080RFPP PB04-022RFPP) AGERE AGR21045F AGR21045U AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A	PDF
21045F Contextual Info: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	AGR26045E AGR26045EU AGR26045EF AGR26045Eerican DS04-110RFPP 21045F	PDF
Contextual Info: Preliminary Product Brief December 2003 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	AGR26045E AGR26045EU AGR26045EF PB04-022RFPP	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF