AN1521 Search Results

AN1521

Abstract: 10E116 H4Eplus HP54006A
Contextual Info: Order this document by AN1521/D MOTOROLA SEMICONDUCTOR Application Note AN1521 High-Performance CMOS Interfaces for the H4CPlus and H4EPlus Series Gate Arrays Prepared by: Jon Houghten, Loren Kinsey, Jerry Prioste, and Peter Economopoulos Application Specific Integrated Circuits Division, Chandler AZ

zener diode 1.5KE250A

Abstract: TL431 PLE AN1521 thermistor 1kv 1.5KE250A 1uf/63v 5ke250A thermal fuse 115 250V 2A TL431 application note cramer transformers
Contextual Info: AN1521 - APPLICATION NOTE VIPower: 48W POWER SUPPLY USING VIPer100A Vee Shing Wong INTRODUCTION This application note describes a wide-range input off-line mode single switch Flyback power supply using VIPer100A. The VIPer100A is a current mode PWM with a high voltage avalanche rugged Vertical

Contextual Info:  AN1521 - APPLICATION NOTE VIPower: 48W POWER SUPPLY USING VIPer100A Vee Shing Wong INTRODUCTION This application note describes a wide-range input off-line mode single switch Flyback power supply using VIPer100A. The VIPer100A is a current mode PWM with a high voltage avalanche rugged Vertical

4700pF/1KV

Abstract: p6142 1N4148 1N5251 AN1521 STTA106 TL431 thermal fuse 115 250V 2A P10733 thermistor 1kv
Contextual Info: AN1521 - APPLICATION NOTE VIPower: 48W POWER SUPPLY USING VIPer100A Vee Shing Wong INTRODUCTION This application note describes a wide-range input off-line mode single switch Flyback power supply using VIPer100A. The VIPer100A is a current mode PWM with a high voltage avalanche rugged Vertical

dp83848vv

Contextual Info: DP83848I PHYTER - Industrial Temperature Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver General Description Features The DP83848I is a robust fully featured 10/100 single port Physical Layer device offering low power consumption, including several intelligent power down

AOI21

Abstract: OAI22 32X72 equivalent to TRANSISTOR BC 187 ao21 AN1521 low noise transistor bc 179 OMPAC wirebond die flag lead frame using NAND gate construct an inverter
Contextual Info: Order this Data Sheet by H4CP/D MOTOROLA SEMICONDUCTOR H4CPlus SERIES TECHNICAL DATA Product Data Sheet H4CPlus SERIES CMOS ARRAYS The new H4CPlus Series arrays feature new 3.3V, 5V and mixed-voltage capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew

48V dc poe

Abstract: LM507X voip basics LM5071 regulator adapter switch PWM dc-dc controller dp83848 LM5072 LM5073 TSSOP14
Contextual Info: Power Over Ethernet PoE 1 PoE Basics 2 What is PoE and PoE Devices? 1. PoE: Power over Ethernet is a revolutionary technology developed by IEEE 802.3af for Power Sourcing Equipments (PSE) to provide power to IP-based terminals Powered Devices (PD) over existing data cable CAT5. PoE integrates data and power on the same cable.

Contextual Info: Document 561 SMT Gate Drive Transformer •฀ Designed฀for฀transformer฀coupled฀MOSFET฀and฀฀IGBT฀ gate drive circuits; operating frequency: 50 kHz to 2 MHz. •฀ 2250฀Vdc฀primary฀to฀secondary฀isolation •฀ Requires฀only฀56฀mm2 of board space.

Contextual Info: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their

smd D2E diode

Abstract: D2E diode smd SOD 23 5.6v AN1521 panasonic ceramic capacitor, .1uF 50v SM0603 schematic 12v 3a power supply 6TPE220MI BAT54HT 16V 220uF
Contextual Info: Application Note 1521 ISL6445 Evaluation Board User Guide Hardware Description VIN The ISL6445EVAL3Z evaluation board is designed to demonstrate the performance of the ISL6445. LOAD LOAD The ISL6445 is a high-performance, dual-output PWM controller optimized for converting wall adapter, battery

UC3843 spice model

Abstract: project on water level control using ic 7400 mosfet cross reference mhw612 mc146805g MC88110 MC68020 Minimum System Configuration smart UPS APC CIRCUIT diagram ASSIST09 mhw613
Contextual Info: BR101/D REV 28 Technical and Applications Literature Selector Guide and Cross References Effective Date 1st Half 1998 Semiconductor Products Sector Technical and Applications Literature Selector Guide and Cross References ALExIS, Buffalo, Bullet-Proof, BurstRAM, CDA, CMTL, Ceff-PGA, Customer Defined Array, DECAL, Designerís, DIMMIC,

Contextual Info: Document 561 SMT Gate Drive Transformer The FA2659-AL gate drive transformer is designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. It offers low leakage inductance, excellent interwinding capacitance and 2250 Vdc primary to secondary isolation. The miniature surface

CRCW12068R20J

Abstract: cc7343 Resistor 820 Ohm SI2301 equivalent resistor 0.47 ohm rj45 connector with built in transformer schematic LTM673-R1S2-35 resistor 220 ohm si2301 SOT23-3 10 pin monitor flyback transformer schematics
Contextual Info: National Semiconductor Application Note 1521 Youhao Xi Bradley Kennedy April 4, 2008 Introduction 3.3V. Contact National on support to modify the latter version to other output voltage. In the following, descriptions apply to both versions of the circuit boards unless specifically indicated.

FA2659-ALC

Abstract: SR-332 NATIONAL IGBT igbt gate drive circuits Telcordia SR-332 362 MOSFET
Contextual Info: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their

Contextual Info: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their

48V dc poe

Abstract: LM5070 12v output LM5035 LM507X LM5070 LM5073 48 VDC voltage regulator LM5071 LM5072 TSSOP14
Contextual Info: 以太网电源 PoE 1 PoE 基本概念 2 什么是 PoE 和 PoE 器件? 1. PoE:以太网电源是一种由 IEEE802.3af 开发的革新性技术，专门为电源供电 设备 (PSE) 而设，它可经由现行的数据电缆来供电给基于 IP 终端的受电器

SNLA079

Abstract: CMPZ4619 CMZ5944B
Contextual Info: User's Guide SNOA476C – October 2006 – Revised April 2013 AN-1521 POEPHYTEREV-I / -E Evaluation Board 1 Introduction The POEPHYTEREV-I/-E evaluation board is a seamless design demonstrating Texas Instruments LM5072 PoE product capable of up to 24W and DP83848I (single port 10/100Mb/s) Ethernet PHYTER

TMS 3766

Abstract: transistors 1UW AN1521 ao21 mx618 MX61H AOI21 H4EP012 H4EP044 H4EP171
Contextual Info: Order this Data Sheet by H4EP/D MOTOROLA bu SEMICONDUCTOR TECHNICAL DATA H4EPlus SERIES Advanced Information H4EPlus SERIES CMOS ARRAYS The H4EPlus Series arrays offer a fully featured 3.3V, 5V and mixed voltage capable family combined with an increased core density providing over 50% more

FA2659-AL

Abstract: FA2659 AN1521 MTBF IGBT fit
Contextual Info: Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc, one minute primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their