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    AN1987 Search Results

    AN1987 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN1987 Freescale Semiconductor Quiescent Current Control for the RF Integrated Circuit Device Family Original PDF

    AN1987 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE Z1 04 833 motorola

    Abstract: MW4IC2020 SOT c5 87 MWIC930 david maurin ibsg AN1987 BC857ALT1 MHVIC915 MW4IC2230
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN1987/D SEMICONDUCTOR APPLICATION NOTE AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family INTRODUCTION THERMAL TRACKING CIRCUIT This application note introduces a bias control circuit that


    Original     		PDF AN1987/D AN1987 MHVIC915 MW4IC915, MWIC930, MW4IC2020, MW4IC2230 MW5IC2030. DIODE Z1 04 833 motorola MW4IC2020 SOT c5 87 MWIC930 david maurin ibsg AN1987 BC857ALT1

    AN1987

    Abstract: ibsg BC857ALT1 MHVIC915 MW4IC2020 MW4IC2230 MW4IC915 MWIC930 cdma study
    Text: Freescale Semiconductor Application Note AN1987 Rev. 1, 5/2004 Quiescent Current Control for the RF Integrated Circuit Device Family By: James Seto INTRODUCTION THERMAL TRACKING CIRCUIT This application note introduces a bias control circuit that can be used with the Freescale family of RF integrated


    Original     		PDF AN1987 MHVIC915 MW4IC915, MWIC930, MW4IC2020, MW4IC2230 MW5IC2030. AN1987 ibsg BC857ALT1 MW4IC2020 MW4IC915 MWIC930 cdma study

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    ATC 1084

    Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage


    Original     		PDF MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1

    Rogers 4350B

    Abstract: GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 0, 4/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970NBR1 Rogers 4350B GPS2020 ECJ4YF1H106Z surface mounted fuse, moisture sensitivity level 4350B A113 A114 A115 AN1955 AN1987

    Untitled

    Abstract: No abstract text available
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


    Original     		PDF MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage


    Original     		PDF MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW7IC915N Rev. 1, 12/2009 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on- chip matching that makes it usable from 698 to 960 MHz. This multi- stage struc-


    Original     		PDF MW7IC915N MW7IC915N MW7IC915NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage


    Original     		PDF MD7IC2251N MD7IC2251N MD7IC2251NR1 MD7IC2251GNR1

    100B0R5BW

    Abstract: MW4IC2020NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage


    Original     		PDF MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    Murata grm40

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 MHVIC915R2 Murata grm40

    MW4IC2230NB

    Abstract: j631 marking j130 J242
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242

    MMG3014N

    Abstract: No abstract text available
    Text: Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking Freescale Semiconductor Technical Data Rev. 0, 5/2010 RF Reference Design Library MMG3014N Driving MW7IC2240N W- CDMA RF Power Amplifier Lineup


    Original     		PDF MMG3014N MMG3014N

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This


    Original     		PDF MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 0, 5/2005 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC


    Original     		PDF MHV5IC2215N MHV5IC2215NR2 MHV5IC2215NR2 MHV5IC2215N

    AN1977

    Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base


    Original     		PDF MW6IC1940N--1 MW6IC1940GNB MW6IC1940GNBR1 AN1977 AN1987 AN3263 J1213 MW6IC1940NBR1

    600S3R9BT

    Abstract: GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MW5IC970NBR1 Rev. 1, 5/2006 RF LDMOS Wideband 2 - Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of


    Original     		PDF MW5IC970NBR1 600S3R9BT GPS2020 4350B A113 A114 A115 AN1955 AN1987 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    MW4IC2020NBR1

    Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR
    Text: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MW4IC2020 MW4IC2020NBR1 MW4IC2020 MW4IC2020MBR1 MW4IC2020GMBR1 Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020GMBR1 MW4IC2020MBR

    A114

    Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3/HSR3 MRFE6S9160HR3/HSR3. PCN12895 MRF6S9160HR3 MRF6S9160HSR3 A114 AN1955 JESD22 MRF6S9160H MRF6S9160HSR3 atc100b220j

    CRCW08054701FKEA

    Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		PDF MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987

    AN1977

    Abstract: AN1987 GRM40 MHVIC915R2 020C Circuit Diagram Panasonic Model DIM 74
    Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 4, 12/2004 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage


    Original     		PDF MHVIC915R2 MHVIC915R2 AN1977 AN1987 GRM40 020C Circuit Diagram Panasonic Model DIM 74