AO4609 Search Results

AO4609

Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
Contextual Info: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

Contextual Info: AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

Contextual Info: AOS Semiconductor Product Reliability Report AO4609/AO4609L, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 30, 2005 1 This AOS product reliability report summarizes the qualification result for AO4609. Accelerated

AO4609

Abstract: Complementary AO4609L
Contextual Info: AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

Contextual Info: Complementary MOSFET ELM14609AA-N •General Description ■Features ELM14609AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • • N-channel P-channel Vds=30V Id=8.5A(Vgs=10V) Rds(on) < 18mΩ(Vgs=10V) Rds(on) < 28mΩ(Vgs=4.5V)