AP10N70 Search Results
AP10N70 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| AP10N70I-A-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 57.86KB | 4 | |||
| AP10N70P | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 188.44KB | 6 | |||
| AP10N70P-A | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 188.79KB | 6 | |||
| AP10N70P-A | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 96.21KB | 4 | |||
| AP10N70R | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 96.21KB | 4 | |||
| AP10N70R-A | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 101.52KB | 4 | |||
| AP10N70S | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 171.26KB | 5 | |||
| AP10N70W | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 221.81KB | 5 |
AP10N70 Datasheets Context Search
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Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70R/P AP10N70 265VAC O-220 O-262 O-220 10N70R | |
AP10N70Contextual Info: AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated Test D ▼ Fast Switching Performance ▼ Simple Drive Requirement 650V RDS ON 0.6Ω ID G ▼ RoHS Compliant BVDSS 10A S |
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AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 100us 100ms | |
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Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70W AP10N70 265VAC 100us 100ms | |
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Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS 650V RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 0.62 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 100us 100ms | |
10N70PContextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 10N70P 10N70P | |
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Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70W AP10N70 265VAC 10N70W | |
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Contextual Info: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70S is specially designed as main switching devices for universal |
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AP10N70S AP10N70S 265VAC To-263 O-263 100us 100ms | |
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Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70W AP10N70 265VAC 10N70W | |
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Contextual Info: AP10N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G RoHS Compliant & Halogen-Free 650V 0.62 10A S Description |
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AP10N70I-A-HF O-220CFM 100us 100ms | |
10N70Contextual Info: AP10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 650V 0.62 10A S Description Advanced Power MOSFETs from APEC provide the designer with |
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AP10N70I-A O-220CFM O-220CFM 10N70I 10N70 | |
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Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70R/P AP10N70 265VAC O-220 O-262 O-220 100us 100ms | |
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Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 100us 100ms | |
g10a
Abstract: marking codes transistors SSs
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AP10N70S AP10N70S 265VAC O-263 O-263 10N70S g10a marking codes transistors SSs | |
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Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70R/P AP10N70 265VAC O-220 O-262 O-220 10N70R | |
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Contextual Info: Advanced Power Electronics Corp. AP10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 600V R DS ON 0.6Ω ID 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best |
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AP10N70W-HF-3 AP10N70W-HF-3 AP10N70 10N70W | |
10N70
Abstract: 68A40
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AP10N70I-A O-220CFM O-220CFM 10N70I 10N70 68A40 | |
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Contextual Info: AP10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70S is specially designed as main switching devices for universal |
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AP10N70S AP10N70S 265VAC O-263 O-263 10N70S | |
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Contextual Info: AP10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 650V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for |
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AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 10N70P | |
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Contextual Info: AP10N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement 650V RDS ON 0.62Ω ID G ▼ RoHS Compliant & Halogen-Free |
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AP10N70I-A-HF O-220CFM 100us 100ms | |