AP230 Search Results

Contextual Info: Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 General Description Features The AP2301 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 1.5A current continuously, offers enough

AP2302GN-HF

Abstract: ap2302gn
Contextual Info: AP2302GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Small package outline D BVDSS 20V RDS ON 85mΩ ID ▼ Surface mount package ▼ RoHS Compliant 3.2A S SOT-23 Description

AP2303GN

Abstract: AP2303
Contextual Info: AP2303GN Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -30V RDS ON 240mΩ ID - 1.9A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the

AP2304GN

Contextual Info: AP2304GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small package outline D ▼ Surface mount package BVDSS 25V RDS ON 117mΩ ID 2.7A S SOT-23 Description G The Advanced Power MOSFETs from APEC provide the

AP2307N

Contextual Info: AP2307N Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -16V RDS ON 60mΩ ID - 4A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the

AP2304AGN

Contextual Info: AP2304AGN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques

AP2305AN

Contextual Info: AP2305AN Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -30V RDS ON 80mΩ ID - 3.2A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the

Contextual Info: AP2306CGN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 2.5V gate drive Lower on-resistance 20V RDS ON D 30m ID Surface mount package RoHS Compliant 5.5A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques to

Contextual Info: AP2302GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 2.5V gate drive Small package outline 20V RDS ON D 85m ID Surface mount package RoHS Compliant 3.2A S SOT-23 Description G Advanced Power MOSFETs from APEC provide the

Contextual Info: AP2305GN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Simple Drive Requirement Small Package Outline D Surface Mount Device RoHS Compliant -20V RDS ON 65m ID - 4.2A S SOT-23 Description G D Advanced Power MOSFETs from APEC provide the

Contextual Info: AP2308GEN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Lower Gate Charge ▼ Fast Switching Performance BVDSS 20V RDS ON 600mΩ ID 1.2A S ▼ RoHS Compliant & Halogen-Free

AP2302

Contextual Info: AP2302AGN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Lower Gate Charge BVDSS 20V RDS ON 42mΩ ID ▼ Surface mount package 4.6A S ▼ RoHS Compliant & Halogen-Free

Contextual Info: AP2309GEN-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device BVDSS -30V RDS ON 52mΩ ID - 4.2A S ▼ RoHS Compliant & Halogen-Free

Contextual Info: Data Sheet 2A DDR TERMINATION REGULATOR AP2302L General Description Features The AP2302L linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 2A current continuously, providing

data MOSFET SOT-23

Contextual Info: AP2304AGN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline BVDSS 30V RDS ON 117mΩ ID ▼ Surface Mount Device 2.5A S ▼ RoHS Compliant SOT-23 G Description

Contextual Info: Product Brief 3A DDR TERMINATION REGULATOR AP2302 Description Benefits The AP2302 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 3A current continuously, providing enough current

Contextual Info: Advanced Power Electronics Corp. AP2305GN-HF-3 P-channel Enhancement-mode Power MOSFET D Simple Drive Requirement Small Package Outline Surface Mount Device G RoHS-compliant, halogen-free BV DSS -20V R DS ON 65mΩ ID S -4.2A Description Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: Advanced Power Electronics Corp. AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate Drive D BV DSS Lower On-resistance 30V RDS ON Surface-Mount Device G RoHS-compliant, Halogen-free 35mΩ ID 5A S Description D Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: Advanced Power Electronics Corp. AP2305BGN-HF-3 P-channel Enhancement-mode Power MOSFET D Simple Drive Requirement BV DSS Lower On-resistance Surface Mount Device R DS ON G RoHS-compliant, halogen-free -20V S 65mΩ ID -4.2A Description Advanced Power MOSFETs from APEC provide the designer with the best

Contextual Info: Advanced Power Electronics Corp. AP2302AGN-HF-3 N-channel Enhancement-mode Power MOSFET Capable of 2.5V Gate Drive D BV DSS Low Gate Charge 20V R DS ON Surface Mount Device G RoHS-compliant, halogen-free 42mΩ ID 4.6A S Description D Advanced Power MOSFETs from APEC provide the designer with the best

AP2303N

Contextual Info: AP2303N Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -30V RDS ON 240mΩ ID - 1.9A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the

Contextual Info: AP2301/AP2311 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Description Pin Assignments The AP2301 and AP2311 are single channel current-limited integrated high-side power switches optimized for Universal Serial Bus USB and other hot-swap applications. The family of devices

bc marking code msop8

Abstract: AP-23 n channel mosfet marking Bc AP2301
Contextual Info: AP2301/AP2311 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Description Pin Assignments The AP2301 and AP2311 are single channel current-limited Top View integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices

AP2308GEN

Abstract: n-channel SOT-23
Contextual Info: AP2308GEN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Lower Gate Charge ▼ Fast Switching Performance BVDSS 20V RDS ON 600mΩ ID 1.2A S SOT-23 G D Description G Advanced Power MOSFETs utilized advanced processing techniques to