APT1001R6BN Search Results

APT1001R6BN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT1001R6BN		Advanced Power Technology	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET		Original	PDF

APT1001R6BN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1001R6BN Abstract: APT1001R6BN 1002R4BN APT1002R4BN APT*1002R4BN APT1002RBN Text: D TO-247 G APT1001R6BN 1000V 8.0A 1.60Ω S POWER MOS IV APT1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage	Original	PDF	O-247 APT1001R6BN APT1002R4BN 1001R6BN 1002R4BN O-247AD 1001R6BN 1002R4BN APT*1002R4BN APT1002RBN
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	PDF	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
APT10026JN Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	PDF	MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Untitled Abstract: No abstract text available Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN	OCR Scan	PDF	APT1001R6BN 1001R6BN O-247AD
Untitled Abstract: No abstract text available Text: O A dvanced P o w er Te c h n o lo g y * D O S APT1001R6BN APT901R6BN 1000V 900V 8.0A 1.60Í2 8.0A 1.60Q POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter	OCR Scan	PDF	APT1001R6BN APT901R6BN APT901R68N O-247AD
APT1001R6BN Abstract: No abstract text available Text: A d van ced Q D ro w er Te c h n o l o g y O S APT1001R6BN 1000V APT901R6BN 900V 8.0A 1.6012 8.0A 1.6012 POWER MOS IVe N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS !d All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT1001R6BN APT901R6BN APT1001R6/901R6 O-247AD
lg ds 325 Abstract: No abstract text available Text: A dvanced P o w er Te c h n o l o g y O D APT1001R6BN 1000V 8.0A 1.600 APT901R6BN 900V 8.0A 1.60H O s 3 * WER MOS r N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	PDF	APT1001R6BN APT901R6BN T1001R APT1001R6/901R6BN O-247AD lg ds 325
APT*1002R4BN Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0	OCR Scan	PDF	O-247 APT1001RBN APT1001R1BN APT1001RBNR APT1001R1BNR APT1001R3BN APT1001R6BN APT1002RBN APT1002R4BN APT1002RBNR APT*1002R4BN APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF