APT1002R4BNR Search Results

APT*1002R4BN

Abstract: 2T640
Contextual Info: A dvanced P ow er Te c h n o lo g y 8 O D O APT1002RBNR APT1002R4BNR s 1000V 7.0A 2.00Q 1000V 6.5A 2.400 3* WER MOS IV'81 UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol VDSS All Ratings: T c = 2 5 °C unless otherwise specified.

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D APT1002RBNR 1000V 7.0A 2.000 APT1002R4BNR 1000V 6.5A 2.400 Os POWER MOS IV« UIS RATED N -C H A N N E L E N H A N CEM EN T M O D E HIGH VOLTAGE PO W ER M O SFETS All Ratings: T c = 25°C unless otherwise specified.

APT1002RBNR

Contextual Info: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20