APT12M80S Search Results
APT12M80S Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| APT12M80S |
|
Power MOSFET; Package: D3 [S]; ID (A): 13; RDS(on) (Ohms): 0.8; BVDSS (V): 800; | Original | 117.8KB | 4 |
APT12M80S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
8114
Abstract: APT12M80B APT12M80S MIC4452
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APT12M80B APT12M80S 8114 APT12M80B APT12M80S MIC4452 | |
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Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT12M80B APT12M80S | |
49e 335
Abstract: 8114 APT12M80B APT12M80S MIC4452 torque
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Original |
APT12M80B APT12M80S 49e 335 8114 APT12M80B APT12M80S MIC4452 torque | |
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Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT12M80B APT12M80S |