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Text: APT6070BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)
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Abstract: No abstract text available
Text: APT6070BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)
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APT6060BN
Abstract: 6060BN 6070bn APT6070BN APT6060/5560
Text: O A d van ced D po w er Te c h n o l o g y * O APT6060BN APT5560BN APT6070BN APT5570BN S POWER MOS IV« 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Q 0.60Q 0.70Q 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T r = 25°C unless otherwise specified.
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APT6060BN
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6070bn
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APT6060BNR
Abstract: APT6070BNR APT6070BN
Text: A dvanced P o w er Te c h n o lo g y O D O APT6060BNR APT6070BNR S POWER MOS IV' 600V 13.0A 0.600 600V 12.0A 0.70Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT6060BNR
APT6070BNR
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MIL-STD-750
O-247AD
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6060BN
Abstract: 6070bn APT6060BN APT6070BN APT5560BN APT5570BN 070Q
Text: A d van ced R o w er Te c h n o lo g y Q D Ô S POWER MOS IVe APT6060BN APT5560BN APT6070BN APT5570BN 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Í2 0.60Q 0.70Q 0.70Q N-C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 2 5 °C unless otherwise specified.
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6070bn
070Q
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Text: O A dvanced P ow er Tec h n o lo g y D APT6060BN APT5560BN APT6070BN APT5570BN O S G F v ítR m o s n ü 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Q 0.60Q 0.70Q 0.70Í3 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS All R a tin g s: T c = 25 "C u n le ss o th e rw ise sp e cifie d .
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APT6060BN
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APT6070BN
APT5570BN
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O-247AD
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APT6060BNR
Abstract: APT6070BNR ARJ6060B PT606 APT6070BN
Text: A d v a n ced P o w er Te c h n o l o g y O D O APT6060BNR APT6070BNR S POWER MOS IV® 600V 13.0A 0.60S2 600V 12.0A 0.70» AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT6060BNR
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MIL-STD-750
O-247AD
0001S4S
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Text: ADVANCED POW ER Te c h n o lo g y O D O APT6060BNR APT6070BNR S H?"vv t'H M O S 600V 13.0A 0.6012 600V 12.0A 0.70Q AVALANCHE RATED í W N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd Parameter APT6060BNR APT6070BNR
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Text: A d van ced P o w er Te c h n o l o g y * O D O S APT6060BNR 600V 1 3 .0 A 0 .6 0 Q APT6070BNR 600V 1 2 .0 A 0 .7 0 0 POWER MOS IVe UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS V DSS APT60608NR Parameter Continuous Drain Current @ T c = 25°C
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lm 5560
Abstract: No abstract text available
Text: A dvanced P ow er T e c h n o lo g y 9 Q D Ô S POWER MOS IVe APT6060BN APT5560BN APT6070BN APT5570BN 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Í2 0.60Q 0.70Q 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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6060BN
5570BN
6070BN
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lm 5560
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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APT1001RBN
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APT1001RBNR
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APT1001R3BN
APT1001R6BN
APT1002RBN
APT1002R4BN
APT1002RBNR
APT*1002R4BN
APT5040BNF
FREDFET
APT802R4BN
APT5020BNR
APT5085BN
APT5020BNF
APT5025BN
APT6040BNR
APT5085BNF
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Text: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =
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APT5022BNR
APT5025BNR
APT5027BNR
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APT5085BN
Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Text: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =
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0000fci3c?
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APT5020BNR
APT5022BNR
APT5085BN
APT4065BN
APT6045BNR
APT5027BN
APT501R1BN
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APT901RBN
Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN
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000027b
APT1001RBN
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APT901R2BN
APT902RBN
apt4530bn
APT801R2BN
APT4030BN
APT902R4BN
APT*1002R4BN
APT3520BN
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APT802R4KN
Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN
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APT4016BN
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APT4040BN
APT5020BN
APT5022BN
APT5025BN
APT5040BN
APT802R4KN
APT6018LNR
APT6060BN
mosfet selector guide
APT-6018
APT10M25bnfr
k 3530 MOSFET
1r3b
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APT5085BN
Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN
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O-247
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APT801R2BN
APT5025BN
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