APT7M120S Search Results
APT7M120S Price and Stock
Microchip Technology Inc APT7M120SMOSFET N-CH 1200V 8A D3PAK |
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APT7M120S | Bulk | 80 |
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APT7M120S | Tube | 20 Weeks | 80 |
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APT7M120S | Bulk | 80 |
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APT7M120S | Tube | 20 Weeks |
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APT7M120S | 1 |
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APT7M120S | Tube | 56 |
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APT7M120S | 22 Weeks | 80 |
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APT7M120S | 21 Weeks | 80 |
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APT7M120S | 80 |
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APT7M120S Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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APT7M120S |
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N-Channel MOSFET | Original | 265.33KB | 4 |
APT7M120S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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APT7M120B
Abstract: APT7M120S MIC4452
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Original |
APT7M120B APT7M120S APT7M120B APT7M120S MIC4452 | |
mosfet 1200V 3A
Abstract: APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a
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Original |
APT7M120B APT7M120S mosfet 1200V 3A APT7M120B APT7M120S MIC4452 MOSFET 1200v 3*a | |
Contextual Info: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT7M120B APT7M120S | |
MOSFET 1200v 3aContextual Info: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT7M120B APT7M120S MOSFET 1200v 3a |