AQV41 Search Results

AQV412

Abstract: 414EH AQV414EAZ AQV414 AQV410
Contextual Info: GU-E 1 Form B AQV414E, AQV41EH VDE (AQV412EH) VDE TESTING (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41EH) AQV414E, FEATURES 3.9

AQV414

Abstract: AQV414A AQV414AX AQV414E AQV414EA AQV414EH AQV414EHA LR26550
Contextual Info: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).

414EH

Abstract: AQV412EHA AQV412 AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EH AQV410
Contextual Info: GU-E 1 Form B AQV414E, AQV41PEH VDE VDE TESTING (AQV412EH) (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41PEH) FEATURES 1. High cost-performance type of

smoke detector schematic diagrams

Abstract: DW-AS-603-M12 schematic diagram dc to ac converter ultrasonic range meter IC electromagnetic relay HOW TO DRIVE SSR USING MOSFET DRIVER triac drive circuit pulse transformer Transistors Diodes smd e2 5 pins relay pin diagram convertor DC input 24 v output 5 v 2A
Contextual Info: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).

smoke detector schematic diagrams

Abstract: diagram 3 phase heater schematic diagram ac-dc supply smoke sensor schematic Transistors Diodes smd e2 schematic diagram heater ultrasonic Phase Frequency detector AQS610TS AQV410EH AQV410EHA
Contextual Info: AQV410EH PhotoMOS RELAYS GU General Use -E Type 1-Channel (Form B) Type FEATURES 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

Contextual Info: GU-E 1 Form B AQV414E, AQV41EH VDE (AQV412EH) VDE (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41EH) AQV414E, FEATURES 3.9 .154 6.4

XCA111

Abstract: LCA111E xca111l LCA111 PFA113A XCA110 PFA122A okita Aromat relays PFA141A
Contextual Info: High-Voltage Solid State Relays Cross Reference† Aromat Matsushita Infineon Aromat (Matsushita) Infineon CP Clare Infineon AQV101 LH1517AT AQV414A LH1501AAB LCA142/E LH1510AT AQV101A LH1517AAB AQW214 LH1550AT1 LH1517AT LH1520AB LH1526AB LCA143 AQV102 LCA143E

AQV414

Abstract: AQV414A AQV414AX AQV414AZ
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✬✩ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 3.9 .154 6.4 .252 8.8 .346 3.6 .142

414EH

Abstract: AQV410EH AQV412EH AQV412EHA AQV414E AQV414EA AQV414EH AQV412
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✧✣ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form B AQV414E, AQV41❍EH VDE (AQV412EH) VDE TESTING (Standard type) Normally closed DIP6-pin economic type with reinforced insulation

RELAY

Abstract: AQV414 AQV414A
Contextual Info: AQV414 / AQV414A HIGH VOLTAGE, PHOTO MOS RELAY 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: globalcomponents@msn.com

AQV414

Abstract: AQV414A AQV414AX AQV414AZ Panasonic RELAY Cross Reference
Contextual Info: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.

Contextual Info: GU PhotoMOS AQV414S GU PhotoMOS (AQV414S) GU (General Use) Type SOP Series [1-Channel (Form B) Type] (DIP) 4.4 .173 6.3 .248 (SOP) Approx. 25% 2.1 .083 Volume mm inch Approx. 50% 1 6 2 5 3 4 Footprint 2. Low on resistance (Max. 50 Ω) at 400 V for normally-closed type

Contextual Info: GU PhotoMOS AQV414 GU PhotoMOS (AQV414) DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.

Contextual Info: Standard type TESTING VDE (Reinforced type) GU-E PhotoMOS (AQV414E, AQV41❍EH) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. ; ; 4. Low-level off state leakage current The SSR has an off state leakage current

AQV414S

Abstract: AQV414SX AQV414SZ
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✬✥ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083

Contextual Info: GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 1. Miniature SOP6-pin package The device comes in a small SOP measuring (W) 4.4 x (L) 6.3 ×(H) 2.1 mm (W) .173× (L) .248×(H) .083 inch approx.

414EH

Abstract: AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ
Contextual Info: GU-E PhotoMOS AQV414E, AQV41❍EH VDE TESTING (AQV412EH) (Standard type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 6 2 5 3 4 Cross section of the normally-closed type of

AQV414S

Abstract: AQV414SX AQV414SZ
Contextual Info: GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 1. Miniature SOP6-pin package The device comes in a small SOP measuring (W) 4.4 x (L) 6.3 ×(H) 2.1 mm (W) .173× (L) .248×(H) .083 inch approx.

AQV412

Abstract: 414EH AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ
Contextual Info: GU-E PhotoMOS AQV414E, AQV41❍EH VDE TESTING (AQV412EH) (Standard type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 (Reinforced type)

Contextual Info: AQV410 PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 1. Low on resistance fo r normallyclosed type This has been realized thanks to the built-in MOSFET processed by our pro­ prietary method, DSD (Double-diffused

Contextual Info: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) AQV414 FEATURES 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3. High sensitivity and low onresistance Can control max. 0.15 A load current with 5 mA input current. 4. Low-level off state leakage current

Contextual Info: Standard type TESTING VDE (Reinforced type) GU-E PhotoMOS (AQV414E, AQV41❍EH) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. ; ; 4. Low-level off state leakage current The SSR has an off state leakage current

nais relay cross reference

Contextual Info: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

Contextual Info: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.