AS7C31024L Search Results

megatron

Abstract: 10N12 Beacon 406 MHz AS7C31024 BJ 919 26A41
Contextual Info: High Performance 128Kx8 3.3V CMOS SRAM H J 8 |j ^ AS7C31024 AS7C31024L PRELIMINARY _ Low Voltage 128Kx8 CMOS SRAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

MPS 0733

Abstract: MPS 0729 mps 0720 rochester mps 90 JH23 ldh 0470 cwi 1011 mps 0820 dfl 210 9S40
Contextual Info: High Performance •■ AS7C3 1024 128KX8 3.3V II AS7C31024L CMOS SRAM @ Low voltage 128KX8 CMOS SRAM C o m m o n I / O Features • • • • Organization: 1 3 1 ,0 7 2 w ords x 8 bits Single 3.3 + 0 .3 V pow er supply 5V tolerant I/O specification H igh speed

Contextual Info: Il AS7C1024 AS7C1024L AS7C31024 AS7C31024L 128Kx8 CM OS SRAM Common I/O family Features • O rganization: 13 1 ,0 7 2 w o rd s x 8 bits • H igh speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e - 3 / 3 / 4 / 5 ns o u tp u t enable access tim e • Low p o w e r c o n su m p tio n available

TAA 761 A

Abstract: AS7C31024 AS7C31024-12PC
Contextual Info: High Performance 128Kx8 3.3V CMOS SRAM AS7C31024 AS7C31024L Low voltage 128K×8 CMOS SRAM Common I/O Features • Organization: 131,072 words × 8 bits • Single 3.3 ±0.3V power supply • 5V tolerant I/O specification • High speed - 12/15/20/25/35 ns address access time

Contextual Info: High Performance 128Kx8 3.3 V CMOS SRAM H AS7C31024 AS7C31024L PRELIMINARY Low Voltage 128Kx8 CMOS SRAM Common I/O FEATU RES Equal access and cycle times • Organization: 131,072 words x 8 bits • Easy memory expansion with CE1, CE2 and OE inputs • Single 3.3 ±0.3V power supply

C31024

Contextual Info: Preliminary information •■ AS7C31024LL A 3.3V 12 8 K X 8 Intelliwatt low power CM OS SRAM Features • • • • Intelliwatt active power reduction circuitry 2.7V to 3.6Yoperating range Organization: 131,072 words x 8 bits High speed - 55/ 7 0 /1 0 0 ns address access time

310241

Abstract: A83Z
Contextual Info: High Performance •■ AS7C3 1024 128KX8 3.3V II AS7C31024L CMOS SRAM @ Low voltage 128KX8 CMOS SRAM C o m m o n I / O Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b its • E q u a l a c c e ss a n d c y c le tim e s • S in g le 3 .3 + 0 .3 V p o w e r s u p p ly

Contextual Info: Advance information Features • Intelliw att active p o w e r red u ction circuitry • Easy m em o r y exp an sion w ith CEI, CE2, OË in p uts • 1.6 5 V to 1.9 5 V op eratin g range 0ESD 8 -7 • TTL/LVTTL-com patible, three-state I /O • JEDEC registered packaging

Contextual Info: Preliminary information •■ AS7C251024LL A 2.5V 128K X 8 lntelliwatt,v low power CM O S SRAM Features • • • • Intelliwatt active power reduction circuitry 2.3V to 3.0V operating range Organization: 131,072 words x 8 bits High speed - 5 5 * /7 0 /1 0 0 ns address access time

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

AS7C31024-12TC

Abstract: AS7C1024-15TJC
Contextual Info:  $6& $6& .ð&02665$0 &RPPRQ,2 IDPLO\ HDWXUHV • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ Socket compatible with 7C512 64Kx8) - 400 mil SOJ - 8mm × 20mm TSOP • ESD protection ≥ 2000 volts

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

IC ATA 2398

Contextual Info: Advance information •■ A S7C31024LL 3.3V 128K ■8 Intelliwatt " low powei CAAOS SRAM Features • • • • Intelliw att active pow er reduction circuitry 2.7 V to 3.6V operating range O rganization: 131,072 w ords X 8 bits H igh speed - 3 5 / 5 5 / 7 0 / 1 0 0 ns address access tim e

Contextual Info: Preliminary information •■ AS7C181024LL A 1,8V 128K x8 Intelliwatt,v low power CMOS SRAM Features • • • • Intelliwatt active power reduction circuitry 1.65V to 1.95V operating range JESD 8-7 Organization: 131,072 w ords x 8 bits High speed

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

AS7C1024-15TJC

Abstract: AS7C1024L-20JC AS7C31024-12TC AS7C1024-10JC
Contextual Info:  $6& $6&/ $6& $6&/ .ð&02665$0 &RPPRQ,2 IDPLO\ HDWXUHV • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ Socket compatible with 7C512 64Kx8) - 400 mil SOJ - 8mm × 20mm TSOP

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: Features • TTL/LVTTL-compatible, three-state I/O • Organization: 1 3 1 ,0 7 2 words x 8 bits • High speed • • • • - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e - 3 /3 /4 Z 5 ns output enable access time Low pow er consum ption available - Active:

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

Contextual Info: H ig h P e r f o r m a n c e 128K X 8 CMOS SRAM |B A S 7C 181024L L A 1 2 8 K x 8 In te lliw a tt lo w pow er CM O S SR A M Advance information • I n te lliw a tt a c tiv e p o w e r r e d u c t i o n c ir c u itr y • E asy m e m o r y e x p a n s io n w i t h C H I, C E 2, O l i n p u ts

Contextual Info: AS7C1024 AS7C31024 128Kx8 CMOS SRAM Common I/O family Features • O rganization: 1 3 1 ,0 7 2 w o rd s x 8 bits • H ig h speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e - 3 / 3 / 4 / 5 ns o u tp u t enable access tim e • Low p o w e r c o n su m p tio n available

Contextual Info: H ig h P e r fo r m a n te 128KX8 C M O S SRAM A S7C31024LL mm II A 1 2 8 K X 8 In te lliw a tt lo w pow er CM O S SRAM Advance information Features > Easy m e m o ry e x p a n s io n w ith CE1, CE2, OE in p u ts • 2.7V to 3.6V o p e ra tin g ra n g e

AS7C31024LL-55BC

Abstract: AS7C31024LL-55TC AS7C31024LL-55TI
Contextual Info: 3UHOLPLQDU\#LQIRUPDWLRQ $6:&64357// 6169#45;.ð;#,QWHOOLZDWWŒ#ORZ#SRZHU#&026#65$0 HDWXUHV • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • JEDEC registered packaging - 32-pin TSOP packag - 48-ball 8mm x 6mm CSP BGA