AM29DL16XC Search Results

DL162

Abstract: DL163
Contextual Info: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.

JESD-95

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

am29dl163cb

Abstract: AM29DL163C AMD Family 10h Processor Electrical Data Sheet S29JL032 S29JL032H 120R DL162 DL163 S29AL016D AM29DL163CT90
Contextual Info: Am29DL16xC Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs that do not require simultaneous read/write SRW operations, the S29AL016D supersedes Am29DL16xC. For new designs that require SRW, the S29JL032H supersedes Am29DL16xC. Please refer to the

Contextual Info: PR ELIM IN ARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES • ■ ■ Sim ultaneous R ead/W rite o perations — Data can be continuously read from one bank w hile

DL160

Abstract: DL320 Am29DL322
Contextual Info: Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory AMD FLASH: AMD's patented simultaneous read/write family of Flash memory devices is the first hardware capable of reading data during program or erase operations. AMD's dual bank design divides

Contextual Info: PRELIMINARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ ■ 20 Year data retention at 125°C

AM29DL163CT70R

Contextual Info: Am29DL16xC Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs that do not require simultaneous read/write SRW operations, the S29AL016D supersedes Am29DL16xC. For new designs that require SRW, the S29JL032H supersedes Am29DL16xC. Please refer to the

AM29DL163CT

Abstract: D163CT90V D164C
Contextual Info: PRELIMINARY Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

D164C

Abstract: AM29DL163CT90 DL162 DL163
Contextual Info: PRELIMINARY Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

Contextual Info: SUPPLEMENT Am29DL16xC Data Sheet Supplement for PROM Programmer Manufacturers This supplement is for use with the Am29DL16xC data sheet, document number 21533. This document describes the sector protection and sector unprotection functions intended for programming equipment. The

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

164D48

Abstract: DL162 DL163 D163D
Contextual Info: Am29DL162D/163D/164D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

S29JL032

Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
Contextual Info: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.

A29DL163UV70F

Contextual Info: A29DL16x Series 16 Megabit 2M x 8-Bit/1M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue

Contextual Info: ADVANCE INFORMATION Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

Contextual Info: P R O D U C T B R I E F Simultaneous Read/Write Flash Memory Devices Am29DL400 Am29DL800 Am29DL16x Am29DL32x New High Density Device Features Ba n M k 1 b Ba n (M k 2 b) t Pa r Ba n (M k 2 b) Key features include the following: Device Bank Sizes Ba n (M k 1

DL161

Abstract: DL162 DL163 D163DB70
Contextual Info: Am29DL16xD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Am29DL162CB

Contextual Info: PRELIMINARY Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

D164DB70

Abstract: d162dt90
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations

am29dl323cb

Abstract: DL323 DL322
Contextual Info: PRELIMINARY Am29DL322C/Am29DL323C 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL322

Abstract: DL323 et154 AM29DL323CB-90 AM29DL323CT90
Contextual Info: ADVANCE INFORMATION Am29DL322C/Am29DL323C 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while