Sot-220
Abstract: 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100
Text: 3 7E SEMELAB LTD D • B1331A7 ■ G00015S SEMELAB -1 X \ BUP 42 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 10.3 max. 3.6 p. è L|. « I I 1.3 r 15.8 ¿.5max FEATURES 5 .9 • HIGH BREAKDOWN VOLTAGE min. • HIGH RELIABILITY max. • WIDE AREA OF SAFE OPERATION
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B1331Ã
GQ001SS
55to150Â
BUP42
Sot-220
1121t
B1331
BUP42
LE17
npn 10a 800v
a1023
S7100
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Untitled
Abstract: No abstract text available
Text: IUI it t i N il SEME WM8016 LAB DUAL 8 BIT DAC WITH NON-VOLATILE MEMORY NC E DÜ VDD NC [I 3 LATCHB REFA H g DATA OUTA 5 g CLK GND H Ü NC E 0] FEATURES R E FB TST OUTB Ü D I G IT A L G N D ta H NC • • • • • • • • • • • vss VDD VSS Two 8 bit D to A converters
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WM8016
WM8016
100kHz
00014SÃ
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Untitled
Abstract: No abstract text available
Text: BDS13 BDS14 BDS15 “ llll- SEME LAB MECHANICAL DATA Dimensions in mm 10.6 i4- - SILICON PNP EPITAXIAL BASE IN T0220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4 .6 - ► 0.8 A- - - - - - - i Q . 3.6 i f r BDS13SM BDS14SM BDS15SM D ia . ri <od |
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BDS13
BDS14
BDS15
T0220
BDS13SM
BDS14SM
BDS15SM
T0220M
T0220SM
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SML45G60AN
Abstract: SULB
Text: SEMELAB PLC_ bDE D • 0133167 □DDGiGQ Mflfl ■ ■ SULB llll MOS POWER 4 IGBT 'Psvsi m SEME SML45G60AN LAB 600V 45A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.
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SML45G60AN
SML45G600AN
SULB
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