B5000 Search Results

UL1061 26 AWG

Abstract: 12FL GB1205PKV3-8AY brushless blower
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : DC BRUSHLESS BLOWER DIMENSIONS : 50X50X20 mm MODEL : GB1205PKV3-8AY P/N : APPROVAL NO. : APPROVED BY : AUTHORIZED DRAWN Joy 9/25 CHECKED Jessica Kiddy APPROVED Winner SPEC.NO ISSUE DATE EDITION B500069

UL1061 26 AWG

Abstract: GB1205PKV1-8AY 12FL B500063 Sunon
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : DC BRUSHLESS BLOWER DIMENSIONS : 50X50X20 mm MODEL : GB1205PKV1-8AY P/N : APPROVAL NO. : APPROVED BY : AUTHORIZED DRAWN Joy 9/25 CHECKED Jessica Kiddy APPROVED Winner SPEC.NO ISSUE DATE EDITION B500063

Contextual Info: B5000RW Series Compact, 1 x 2 Inch 50W, 2:1 Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

Contextual Info: SAW Filters for Infrastructure Systems Series/Type: B5000 The following products presented in this data sheet are being withdrawn. Ordering Code B5000H510 Substitute Product Date of Withdrawal 2011-07-15 Deadline Last Orders 2011-12-31 Last Shipments

B5003

Abstract: 05B5
Contextual Info: BAS40.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switchhing • Circuit protected • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves

BAS70-04

Abstract: BAS 40 B5003 73S SOT23 75S SOT23 schottky 73s
Contextual Info: BAS70.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves

SMD MARKING CODE s4

Abstract: DCC12A B5000 S4 SMD Marking Code B39191-B5000-H510
Contextual Info: SAW Components Data Sheet B5000 SAW Components B5000 Low-Loss Filter 190,0 MHz Data Sheet Ceramic package DCC12A Features ● Low-loss IF filter for GSM base stations ● Ceramic SMD package ● Temperature stable 7,62 1,0 2 3 4 5 2,3 1,7 1 Terminals bottom view

BAT64-04 E6327

Contextual Info: BAT64.B5000 / B5003 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Improved operating temperature range due to extra-low thermal resistance

BAT54

Contextual Info: BAT54.B5000 / B5003 Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Guard ring protected • Low forward voltage • Improved operating temperature range due to extra-low thermal resistance

Contextual Info: B5000RW Series Compact, 1 x 2 Inch 50W, 2:1 Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

12FL

Abstract: GB1205PHVX-8AY 50X50X1 GB1205PH
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : DC BRUSHLESS BLOWER DIMENSIONS : 50X50X15 mm MODEL : GB1205PHVX-8AY P/N : APPROVED NO : APPROVED BY : AUTHORIZED DAWN. Chiahui 2/20 CHKD. Kiddy APPD. Winner SPEC. NO. ISSUE DATE EDITION REVISE DATE

Contextual Info: 2 4 7 6 REVISIONS ISS ZONE DESCRIPTION\PER REQUEST\DATE 8.3 -5,6 -4.1- • F F RECOMMENDED CABLE STRIPPING DIM’S E E D D C C NGTE5: 1. 2. 3. FINI5H BRASS BRASS NICKEL PLATING THICKNE55 IN MICRO—INCHE5 PER Q Q -B-626 PER G G -B-613 PL. 100 MIN. THICK OVER COPPER STRIKE

MIL-P-19465

Contextual Info: 3 2 4 5 6 REVISIONS I5S ZDNE D ESC R IPTIO N ^ ER REQUEST\DATE F F E E D D C C NDTES: FINISH PLATING THICKNESS 1 . BRASS PER QQ—El —626 2. BRASS PER Q Q -B-613 3. NICKEL PL. 1 GO MIN. THICK OVER COPPER STRIKE 4. NICKEL PL. 2 0 0 MIN, THICK OVER COPPER STRIKE

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Chip LED with Bi-Color Multi-Color 19-22SDRUSOC/S530-A2/TR8 Features ˙Package in 8mm tape on 7〞diameter reel. ˙Compatible with automatic placement equipment. ˙Compatible with infrared and vapor phase reflow

C000H-DFFFH

Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

FL128P

Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70