B60FP Search Results

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP3NB60 B60FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYP E STP3N B60 STP3N B60FP • . . . . V dss R D S (on) Id 600 V 600 V < 3 .6 Q. < 3.6 Q. 3 .3 A 2 .2 A TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: STP9NB60 B60FP N - CHANNEL 600V - 0.7Î2 - 9A T0-220/T0220FP PowerMESH MOSFET TYPE S TP9N B60 STP9N B60FP • . . . . V dss RDS on Id 600 V 600 V < 0.8 Q. < 0.8 Q, 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Diode B60

Abstract: 5NB60FP B60FP
Contextual Info: SGS-THOMSON !LiM@iO gS STP5NB60 B60FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STP5N B60 S TP5N B60FP • . . . . V dss R D S (o n Id 600 V 600 V < 2.0 a < 2.0 a 5 A 3 A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STW13NB60

Abstract: STH13NB60FI
Contextual Info: STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Î2 - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V STW 13N B 60 STH 13N B60FI • . . . . dss 600 V 600 V R D S o n Id <0.54 Q. <0.54 Q, 13 A 8.6 A TYPICAL RDS(on) = 0.48 £1 EXTREMELY HIGH dv/dt CAPABILITY