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    Infineon Technologies AG BAR6303WE6327HTSA1

    RF DIODE PIN 50V 250MW SOD323-2
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    DigiKey BAR6303WE6327HTSA1 Reel 108,000 3,000
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    Mouser Electronics BAR6303WE6327HTSA1 13,648
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    Arrow Electronics BAR6303WE6327HTSA1 155,840 1
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    Infineon Technologies AG BAR6302VH6327XTSA1

    RF DIODE PIN 50V 250MW SC79-2
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    Infineon Technologies AG BAR6304E6327HTSA1

    RF DIODE PIN 50V 250MW SOT23-3
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    DigiKey BAR6304E6327HTSA1 Cut Tape 17,892 1
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    Infineon Technologies AG BAR6306E6327HTSA1

    RF DIODE PIN 50V 250MW SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAR6306E6327HTSA1 Digi-Reel 5,965 1
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    Infineon Technologies AG BAR6305E6327HTSA1

    RF DIODE PIN 50V 250MW SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAR6305E6327HTSA1 Digi-Reel 4,456 1
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    Find more BAR63 price and stock on Findchips.com

    BAR63 Datasheets (173)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAR 63 Infineon Technologies DIODE PIN SWITCH 50V 3SOT-23 Original PDF
    BAR63 Infineon Technologies Silicon PIN Diode Original PDF
    BAR63 Infineon Technologies Silicon PIN Diodes Original PDF
    BAR63 Kexin Silicon PIN Diode Original PDF
    BAR63 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BAR63 Siemens Cross Reference Guide 1998 Original PDF
    BAR63 Siemens Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Original PDF
    BAR63 TY Semiconductor Silicon PIN Diode - SOT-23 Original PDF
    BAR63 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAR63-02L Infineon Technologies PIN Diode Original PDF
    BAR63-02L Infineon Technologies DIODE PIN SWITCH 50V 2TSLP-2-1 Original PDF
    BAR63-02L Infineon Technologies Antenna Switch; Package: PG-TSLP-2; IF (max): 100.0 mA; CT (max): 0.3 pF; rF (typ): 1.0 Ohm; Trr (typ): 75.0 ns; Configuration: Single; Original PDF
    BAR63-02LE6327 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF SGL 50V 100MA TSLP-2 Original PDF
    BAR6302LE6327 Infineon Technologies Pin Diode, Attenuator/Switch, Single, 50V, VHF|UHF|SHF, 2-Pin, Tape And Reel Original PDF
    BAR6302LE6327XTMA1 Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE RF SGL 50V 100MA TSLP-2 Original PDF
    BAR63-02LE6433 Infineon Technologies RF Diodes, Discrete Semiconductor Products, DIODE RF SGL 50V 100MA TSLP-2 Original PDF
    BAR63-02LE6433 Infineon Technologies Diode, Attenuator/Switch, Single, 50V, VHF|UHF|SHF, Tape and Reel Original PDF
    BAR6302LE6433XT Infineon Technologies Discrete Semiconductor Products - Diodes - RF - DIODE RF SGL 50V 100MA TSLP-2 Original PDF
    BAR63-02L-TR Infineon Technologies PIN Diode, Switch Diode, Single, TSLP, 2-Pin Original PDF
    BAR63-02V Infineon Technologies High-Speed switching diode in ultra-small SC79 Package Original PDF
    ...

    BAR63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD523 D-74025 24-Nov-03

    marking hz SOD-323

    Abstract: diode sod 106 BAR63J BAS70-07 SOD Package
    Text: BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.


    Original     		PDF BAR63J OD-323 OD-323 marking hz SOD-323 diode sod 106 BAR63J BAS70-07 SOD Package

    Pin diode G4S

    Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
    Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181


    Original     		PDF BAR63. BAR63-04W BAR63-05W BAR63-06W VSO05561 EHA07181 EHA07179 EHA07187 Pin diode G4S BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s

    BAR63V-03

    Abstract: BAR63V-03-GS08 BAR63V-03-GS18
    Text: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-03 OT-23 BAR63V-03 2002/95/EC 2002/96/EC 18-Jul-08 BAR63V-03-GS08 BAR63V-03-GS18

    BAR63-07F

    Abstract: P3S marking TSFP-4
    Text: BAR63-07F XYs Silicon PIN Diode Preliminary data 3 PIN diode for high speed switching of RF signals 2 4 1 Very low forward resistance low insertion loss Very low capacitance (high isolation) TSFP-4  small inductance  For frequencies up to 3GHz  Ultra small SMD package for dual diodes


    Original     		PDF BAR63-07F Mar-08-2002 BAR63-07F P3S marking TSFP-4

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-03W OT-323 BAR63V-03W 2002/95/EC 2002/96/EC OT-323 D-74025 15-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-04W OT-323 BAR63V-04W 2002/95/EC 2002/96/EC OT-323 D-74025 15-Apr-05

    BAR63-02V

    Abstract: No abstract text available
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)


    Original     		PDF BAR63. Q1011) BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W BAR63-02L* BAR63-02V BAR63-02V

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-06W OT-323 BAR63V-06W 2002/95/EC 2002/96/EC OT-323 D-74025 15-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-05 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-05 OT-23 BAR63V-05 D-74025 12-Sep-03

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-04W OT-323 BAR63V-04W D-74025 17-Dec-03

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-02V OD-523 BAR63V-02V OD-523 OD-523) D-74025 26-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-03 OT-23 BAR63V-03 D-74025 15-Dec-03

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-04 OT-23 BAR63V-04 D-74025 12-Sep-03

    Untitled

    Abstract: No abstract text available
    Text: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-03W OT-323 BAR63V-03W D-74025 17-Sep-03

    BAR63V-04

    Abstract: BAR63V-04-GS08 BAR63V-04-GS18
    Text: BAR63V-04 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-04 OT-23 BAR63V-04 OT-23) D-74025 26-Apr-04 BAR63V-04-GS08 BAR63V-04-GS18

    BAR63V-05W

    Abstract: BAR63V-05W-GS08 BAR63V-05W-GS18
    Text: BAR63V-05W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05W was designed for RF signal tuning. As a function of the forward bias current the


    Original     		PDF BAR63V-05W OT-323 BAR63V-05W OT-323) D-74025 26-Apr-04 BAR63V-05W-GS08 BAR63V-05W-GS18

    BAR63V-06

    Abstract: BAR63V-06-GS08 BAR63V-06-GS18
    Text: BAR63V-06 VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-06 OT-23 BAR63V-06 OT-23) D-74025 26-Apr-04 BAR63V-06-GS08 BAR63V-06-GS18

    DIODE marking A2 SCD80

    Abstract: BAR63-02W BAR63-02L BAR63-02V BAR63
    Text: BAR63. Silicon PIN Diodes  PIN diode for high speed switching of RF signals  Very low forward resistance low insertion loss  Very low capacitance (high isolation)  For frequencies up to 3GHz BAR63-02. BAR63-03W 1 BAR63-04 BAR63-04W BAR63-04S BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-04S BAR63-05 BAR63-05W BAR63-06 BAR63-06W DIODE marking A2 SCD80 BAR63-02W BAR63-02L BAR63-02V BAR63

    BAR63V-04

    Abstract: BAR63V-04-GS08 BAR63V-04-GS18
    Text: BAR63V-04 Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-04 OT-23 BAR63V-04 OT-23 D-74025 24-Aug-04 BAR63V-04-GS08 BAR63V-04-GS18

    Pin diode G4S

    Abstract: BAR63-02L BAR63-04W BAR63 BAR63-03W BAR63-04 BAR63-05 BAR63-05W BAR63-06 BAR63-06W
    Text: BAR63. Silicon PIN Diodes • PIN diode for high speed switching of RF signals • Very low forward resistance low insertion loss • Very low capacitance (high isolation) • For frequencies up to 3GHz BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05


    Original     		PDF BAR63. BAR63-02. BAR63-03W BAR63-04 BAR63-04W BAR63-05 BAR63-05W SCD80 OD323 OT323 Pin diode G4S BAR63-02L BAR63-04W BAR63 BAR63-03W BAR63-04 BAR63-05 BAR63-05W BAR63-06 BAR63-06W

    BAR63V-06

    Abstract: BAR63V-06-GS08 BAR63V-06-GS18
    Text: BAR63V-06 Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-23 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-06 OT-23 BAR63V-06 2002/95/EC 2002/96/EC 08-Apr-05 BAR63V-06-GS08 BAR63V-06-GS18

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAR 63;BAR63-04 BAR 63-05;BAR63-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward resistance 0.55 PIN diode for high speed switching of RF signals +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Very low capacitance


    Original     		PDF BAR63-04 BAR63-06 OT-23 BAR63

    BAR63V-04W

    Abstract: BAR63V-04W-GS08 BAR63V-04W-GS18
    Text: BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than


    Original     		PDF BAR63V-04W OT-323 BAR63V-04W OT-323 D-74025 24-Aug-04 BAR63V-04W-GS08 BAR63V-04W-GS18