BAS385 Search Results
BAS385 Price and Stock
Vishay Semiconductors BAS385-TR3DIODE SCHOTT 30V 200MA MICROMELF |
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BAS385-TR3 | Reel | 10,000 | 10,000 |
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Vishay Intertechnologies BAS385-TRSmall Signal Schottky Diode, Single, 30 V, 200 mA, 800 mV, 5 A, 125 ?C, MicroMELF, 2 Pins - Tape and Reel (Alt: BAS385-TR) |
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BAS385-TR | Reel | 6 Weeks | 12,500 |
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BAS385-TR |
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BAS385-TR | 112,500 | 12,500 |
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BAS385-TR | 115,000 | 6 Weeks | 12,500 |
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BAS385-TR | Reel | 12,500 |
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BAS385-TR | 21,223 | 1 |
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BAS385-TR | Reel | 25,000 | 2,500 |
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BAS385-TR | 47,500 | 7 Weeks | 2,500 |
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BAS385-TR | 190,000 | 2,500 |
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Vishay Intertechnologies BAS385-TR3Diode Small Signal Schottky 30V 0.2A 2-Pin MicroMELF T/R - Tape and Reel (Alt: BAS385-TR3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BAS385-TR3 | Reel | 6 Weeks | 10,000 |
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BAS385-TR3 |
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BAS385-TR3 | 7 Weeks | 10,000 |
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BAS385-TR3 | 10,000 |
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BAS385-TR3 | 20,000 | 1 |
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BAS385-TR3 | 8,949 |
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Vishay Intertechnologies BAS385Schottky Rectifier, 200Ma, 30V Micromelf; Diode Configuration:Single; Repetitive Peak Reverse Voltage:30V; Average Forward Current:200Ma; Forward Voltage Max:800Mv; Forward Surge Current:5A; Operating Temperature Max:125°C Rohs Compliant: Yes |Vishay BAS385 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BAS385 | Cut Tape | 12,500 |
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BAS385 | 450 |
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Vishay Semiconductors BAS385-TRBAS385 Series 30 V 200 mA Small Signal Schottky Diode - MICRO-MELF |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BAS385-TR | 152,500 | 1 |
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BAS385 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BAS385 | Vishay Intertechnology | Schottky Barrier Diode | Original | |||
BAS385 | Vishay Semiconductors | Small Signal Schottky Barrier Diode | Original | |||
BAS385 | Vishay Telefunken | Schottky Barrier Diode | Original | |||
BAS385-TR | Vishay Intertechnology | Small Signal Schottky Barrier Diode | Original | |||
BAS385-TR3 | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTT 30V 0.2A 2-PIN MELF | Original |
BAS385 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BAS385 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage 9612315 Applications Mechanical Data Applications where a very low forward voltage is required |
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BAS385 BAS385 BAS385-GS18 BAS385-GS08 D-74025 26-Mar-04 | |
Contextual Info: BAS385 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • Integrated discharge protection ring against static • Very low forward voltage • AEC-Q101 qualified • Material categorization: For definitions of compliance please see |
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BAS385 AEC-Q101 TR3/10K 10K/box BAS385-TR3 BAS385-TR 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
BAS385-TR
Abstract: BAS385
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BAS385 2002/95/EC 2002/96/EC BAS385-TR3 BAS385-TR 18-Jul-08 BAS385-TR BAS385 | |
BAS385Contextual Info: BAS385 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage 96 12315 Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25_C Parameter |
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BAS385 50mmxesign D-74025 01-Apr-99 BAS385 | |
Contextual Info: _ BAS385 v is h a y ▼ Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forw ard voltage Applications A pplications w here a ve ry low forw ard voltage |
OCR Scan |
BAS385 D-74025 01-Apr-99 | |
BAS385Contextual Info: BAS385 Vishay Telefunken Small Signal Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 96 12315 Applications where a very low forward voltage is required Order Instruction Type BAS385 |
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BAS385 BAS385 D-74025 25-Jun-01 | |
Contextual Info: BAS385 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required 9612315 Mechanical Data |
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BAS385 BAS385 BAS385-GS18 BAS385-GS08 D-74025 27-Apr-04 | |
Contextual Info: BAS385 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required 9612315 Mechanical Data |
Original |
BAS385 BAS385 BAS385-GS18 BAS385-GS08 08-Apr-05 | |
BAS385Contextual Info: BAS385 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage 96 12315 Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25_C Parameter |
Original |
BAS385 50mmxes D-74025 06-Dec-00 BAS385 | |
BAS385
Abstract: BAS385-TR
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BAS385 2002/95/EC 2002/96/EC BAS385-TR3 BAS385-TR 08-Apr-05 BAS385 BAS385-TR | |
Contextual Info: BAS385 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T| = 25°C Parameter |
OCR Scan |
BAS385 50mmx50mmx1 01-Apr-99 BAS385_ -Apr-99 | |
Contextual Info: BAS385 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 |
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BAS385 AEC-Q101 2002/95/EC 2002/96/EC TR3/10 BAS385 BAS385-TR3 BAS385-TR 18-Jul-08 | |
Contextual Info: BAS385 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 |
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BAS385 AEC-Q101 2002/95/EC 2002/96/EC TR3/10 BAS385 BAS385-TR3 BAS385-TR 11-Mar-11 | |
Contextual Info: BAS385 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 |
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BAS385 AEC-Q101 2002/95/EC 2002/96/EC TR3/10 BAS385 BAS385-TR3 BAS385-TR 11-Mar-11 | |
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Contextual Info: BAS385 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 |
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BAS385 AEC-Q101 2002/95/EC 2002/96/EC TR3/10 BAS385 BAS385-TR3 BAS385-TR 2011/65/EU 2002/95/EC. | |
1N4148 SOD-80 ST
Abstract: 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114
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OD-523 OD-323 OD-123 DO-35 VMN-SG2114-1202 1N4148 SOD-80 ST 1N4148 SOD-80 bat41 BAT46 1N914 ph bat41 600 033V BAS40-02 BAV10 VMN-SG2114 | |
bat41 BAT46
Abstract: C 12 PH Zener diode bat41 bat43 VMN-SG21 BAT41 equivalent Do219AB BAS520-02V BAS581-02V BAT42W-V BAT43W-V
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OD523 OD323 OD123 SD103CWS-V SD103CW-V VMN-SG2109-0704 bat41 BAT46 C 12 PH Zener diode bat41 bat43 VMN-SG21 BAT41 equivalent Do219AB BAS520-02V BAS581-02V BAT42W-V BAT43W-V | |
STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
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02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B | |
BAS83
Abstract: DL4007 ALL4001G DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 LL4001G
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-65oC 150oC DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 DL4007 LL4001G BAS83 DL4007 ALL4001G DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 LL4001G | |
y1 smd transistor
Abstract: transistor SMD Y1 c3 smd transistor smd transistor Y1 sot-23 TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd 1/a4w smd transistor Y1 smd
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O-252 BUF644 100-kHz O-220 BUF654 BUF742-S-069 y1 smd transistor transistor SMD Y1 c3 smd transistor smd transistor Y1 sot-23 TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd 1/a4w smd transistor Y1 smd | |
TFK 1n4148
Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
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OCR Scan |
1N3600 1N3604 1N4148 1N914 1N4150 1N4151 1N4153 1N4154 TFK 1n4148 TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk | |
N4448Contextual Info: VISHAY _ ▼ Vishay Telefu nken Alphanumeric Index 1N4148.1 N4448 115 BAS19-BAS21 1N4150 118 BAS281 .BAS283 163 BAW27 187 BAW56 189 BAS285 76 79 1N4151 1N4154 120 BAW75 192 123 BAS286 82 BAW76 194 1N4678.1N4717 243 BAS33.BAS34 166 BAY135 196 |
OCR Scan |
1N4148 N4448 1N4150 1N4151 1N4154 1N4678. 1N4717 1N4728A. N4761A 1N5221B. | |
Selector Guide
Abstract: SG2114
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M4-9337-2726 VMN-SG2114-1310 Selector Guide SG2114 | |
P585Contextual Info: Reference Design Evaluation Board for flowPIM 1 Power Modules EVA_P58x for PIM / CIB Modules Reference Design no.: RD_2011-01_001-v04 Table of Contents 1 In tr o d uc t i o n . 4 |
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001-v04 P585 |