BAW62 Search Results

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

BAW62

Abstract: 1970 oscilloscope T0309 T-03-09
Contextual Info: SbE D • 711002b 004031^ 231 M P H I N SbE D PHILIPS INTERNATIONAL BAW62 Jj U O C □ UU 1 r - o 3 ~ o * \ HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA

Contextual Info: BAW62 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 450 mA 1.00 (25.4) min.

diode rj 93

Contextual Info: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage

Contextual Info: BAW62 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 450 mA • Pb / RoHS Free

BAW62

Abstract: transistor BAW62 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 04 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION

BAW62

Contextual Info: • bbSB'IBl DD2b352 40b « A P X N AMER PHILIPS/DISCRETE BAW62 blE D HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage

IR5 20v

Abstract: BAW62 BAW62M LLBAW62
Contextual Info: SynSEMi 5YN5EMI SEMICONDUCTOR_ BAW62 BAW62M BAW62 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW62 Device Electrical Characteristics

DO213AC

Abstract: DO-213AC DIODE 1J DO-35 BAY19 bay82
Contextual Info: OETTOS^ Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor" Pro Electron Diode Series ETiïOhOO Leaded Switching Diodes V Min (nA) Min V,m (V) Max BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62

BAW62

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed diode BAW62 FEATURES DESCRIPTION

Contextual Info: BAW62 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current

Contextual Info: BAW62 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D176 BAW62 High-speed diode Product data sheet Supersedes data of April 1996 1996 Sep 17 NXP Semiconductors Product data sheet High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package

BAW62

Abstract: MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product data sheet Supersedes data of April 1996 1996 Sep 17 NXP Semiconductors Product data sheet High-speed diode BAW62 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package

BAW62

Abstract: FR 309 diode
Contextual Info: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage

BAW62

Abstract: transistor BAW62 DO-204AH
Contextual Info: BAW62 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 450 mA • Pb / RoHS Free

MLA428-1

Abstract: BAW62
Contextual Info: Philips Semiconductors Product specification High-speed diode BAW62 FEA TU R E S D E S C R IP T IO N • Hermetically sealed leaded glass S O D 27 D O -35 package The BAW 62 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass S O D 2 7 (D O -35)

BAV105

Abstract: BAS561 Diode BAx 1PS181 1PS184 1PS193 1PS226 philips 1n4148 DIODE "Philips Semiconductors" BAX DO-35 Diode BAX 12
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal diodes HIGH-SPEED SWITCHING AND GENERAL-PURPOSE DIODES OVERVIEW family VR lF max. V max. (mA) SINGLE DIODES BAW62/ 25 200 BAS 16 100 30

SBAS16DXV6T1G

Contextual Info: BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G Dual Switching Diode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements Pb−Free Packages are Available

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BAS16WT1

Abstract: BAS16WT1G BAW62 diode marking code A6
Contextual Info: BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com 3 CATHODE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge)

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

TDA8596

Abstract: TDA8596TH TDA3664 VP234 AEC-Q100 BAW62 BC859 HSOP36 Q100
Contextual Info: TDA8596 I2C-bus controlled 4 x 45 W power amplifier with symmetrical inputs Rev. 02 — 8 November 2007 Product data sheet 1. General description The TDA8596 is a quad Bridge Tied Load BTL audio power amplifier with symmetrical inputs, made in BCDMOS technology. It contains four independent amplifier channels in

SmD TRANSISTOR a77

Abstract: SmD TRANSISTOR a75 tda4886 rfb 7808 A77 smd A86 SMD bav21 a82 SmD TRANSISTOR a82 TRANSISTOR c104 BAW62 SMD
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA4887PS 160 MHz bus-controlled monitor video preamplifier Product specification File under Integrated Circuits, IC02 2001 Oct 19 Philips Semiconductors Product specification 160 MHz bus-controlled monitor video preamplifier