BC848C Search Results

BC848C

Abstract: 100MHZ
Contextual Info: BC848C SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) Note1 * Collector current ICM : 0.1 A * Collector-base voltage VCBO : 30 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C

k1R transistor

Abstract: MARKING CODE K1R SOT23 k1R diodes BC846A-BC848C BC847B MARKING k1 MARKING CODE K1m SOT23 BC846B BC848CQ-7-F bc848b transistor marking K1R
Contextual Info: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856 – BC858 For switching and AF Amplifier Applications

BC847

Abstract: BC847CDXV6T1 BC847CDXV6T1G BC847CDXV6T5G BC848 BC848CDXV6T1 BC848CDXV6T1G
Contextual Info: BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.

bcs47

Contextual Info: BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS Generai purpose N -P -N transistors M arking BC846 - ID BC846A = 1A BC846B = IB BC847 = 1H BC847A - IE BC847B - IF BCS41C - 1G BC84S - m BC848A = 1J BC848B = IK BC848C - 1L PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m

Contextual Info: MCC TM Micro Commercial Components BC846A THRU BC848C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • NPN Plastic-Encapsulate Transistors Power Dissipation: 0.225W Tamb=25℃ (Note 1)

BC84S

Contextual Info: IL BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N-P-N transistors Marking BC846 = ID BC846A = 1A BC846B = IB BC847 = 1H BC847A = IE BC847B = IF BC847C = 1G BC848 = 1M BC848A = 1] BC848B = IK BC848C = 1L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

Contextual Info: Transistors NPN General Purpose Transistor I BC848BW/BC848B/BC848C fF M tu ra t •E x te rn a l dimensions Units : mm 1 ) BV ceo< 3 0V (Ic — 1mA) 2 ) C om plem ents the BC 858B /B C858BW . BC848BW •P a c k a g e , marking and packaging specifications

BC847CPDW1T1

Contextual Info: BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is

BC848B

Abstract: BC848C BC848BW transistors
Contextual Info: Transistors FElectrical characteristic curves SPEC-C22 615 Transistors 616 BC848BW / BC848B / BC848C Transistors BC848BW / BC848B / BC848C FElectrical characteristic curves 617 Transistors FElectrical characteristic curves 618 BC848BW / BC848B / BC848C

BC848C

Abstract: BC846 BC846A BC846B BC847A BC847B BC847C BC848A BC848B
Contextual Info: BC846A THRU BC848C Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Small l Ideally Suited for Automatic Insertion l 150 C Junction Temperature l For Switching and AF Amplifier Applications Signal Transistor

k1R transistor

Abstract: pnp k1f
Contextual Info: BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR NEW PRODUCT Features • · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856W-BC858W For Switching and AF Amplifier Applications SOT-323 A C TOP VIEW Mechanical Data

BC848BR

Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications SOT-23 A C B Mechanical Data · · · · · · ·

transistor marking K1R

Abstract: npn K1M pnp k1f k1R transistor BC847BW spice marking K1R marking code K1R BC847 SPICE bc847 k1r k1R diodes
Contextual Info: BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR SPICE MODELS: BC846AW BC846BW BC846CW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW Features • · · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856W-BC858W

marking 1F SOT-23

Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications SOT-23 A C B Mechanical Data · · · · · · ·

transistor marking K1R

Abstract: k1R transistor npn K1M
Contextual Info: BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856W-BC858W For Switching and AF Amplifier Applications SOT-323 A C Mechanical Data · · · · · ·

BC848C Spice

Abstract: BC848C bf BC848C
Contextual Info: VISHAY BC848c_Spice Vishay Semiconductors BC848c Spice Parameters * * Model created by * * Uni.Dipl.-Ing. Arpad Buermen * * arpad.burmen@ieee.org * * Copyright: * * Thomatronik GmbH, Germany * * info@thomatronik.de * *

BC848BDW

Contextual Info: BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 http://onsemi.com Dual General Purpose Transistors 3 NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

marking 1a

Abstract: k1k 103
Contextual Info: SPICE MODEL: BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C Pb BC846A - BC848C Lead-free NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856-BC858 SOT-23

BC846A-G

Abstract: BC847A-G BC848A-G BC846B-G BC847B-G BC848B-G BC847C-G BC848C-G Small Signal Transistor BC8468
Contextual Info: Small Signal Transistor BC846A-G Thru. BC848C-G NPN RoHS Device Features -Power dissipation O PCM: 0.20W (@TA=25 C) -Collector current ICM: 0.1A -Collector-base voltage VCBO: BC846=80V BC847=50V BC848=30V -Operating and storage junction temperature range: TJ, TSTG= -65 to +150 OC

bc846

Abstract: marking 1G
Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications

BC847CPDW1T1

Abstract: BC848BPDW1
Contextual Info: BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

BC847BDW1T1G

Contextual Info: BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http://onsemi.com Dual General Purpose Transistors SOT−363 CASE 419B STYLE 1 NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is

BC847CDW1T1G

Abstract: SBC847CDW1T1G SBC846BDW1T1G
Contextual Info: BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, BC848CDW1T1G Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is

Contextual Info: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications