| BCR108S |
|
Infineon Technologies
|
NPN Silicon Digital Transistor Array |
Original |
PDF
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43.57KB |
4 |
| BCR108S |
|
Infineon Technologies
|
SOT363 ICmax = 100mA |
Original |
PDF
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43.62KB |
4 |
| BCR108S |
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Infineon Technologies
|
Dual Built-in Resistor AF Transistors 2xNPN Industrial Standars Types, Icmax of 100mA Vceo of 50V |
Original |
PDF
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503.94KB |
11 |
| BCR108S |
|
Infineon Technologies
|
TRANS DIGITAL BJT NPN 50V 100MA 6SOT-363 |
Original |
PDF
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500.07KB |
10 |
| BCR108S |
|
Infineon Technologies
|
Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 2.2 kOhm; R2: 47.0 k?; hFE (min): 70.0; Vi (on) (min): 0.5 2mA / 0.3V; |
Original |
PDF
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211.28KB |
12 |
| BCR108S |
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Siemens
|
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Original |
PDF
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45.49KB |
4 |
| BCR108S |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
| BCR108SE6327 |
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Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
11 |
| BCR108S E6327 |
|
Infineon Technologies
|
Dual Built-in Resistor AF Transistors, 2xNPN, Industrial Standars Types, Icmax of 100mA, Vceo of 50V |
Original |
PDF
|
503.94KB |
11 |
| BCR108SE6327 |
|
Infineon Technologies
|
TRANS DIGITAL BJT NPN 50V 100MA 6SOT-363 T/R |
Original |
PDF
|
500.07KB |
10 |
| BCR108SE6327 |
|
Infineon Technologies
|
Digital Transistors - R1= 2,2 kOhm , R2= 47 kOhm SOT363 |
Original |
PDF
|
209.55KB |
9 |
| BCR108SE6327BTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
868.39KB |
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| BCR108SE6433 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
11 |
| BCR 108SE6433 |
|
Infineon Technologies
|
TRANS DIGITAL BJT NPN 50V 100MA 6SOT-363 T/R |
Original |
PDF
|
94.1KB |
4 |
|
|
| BCR108SE6433HTMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
868.39KB |
|
| BCR108SH6327 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
12 |
| BCR108SH6327XTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
211.43KB |
|
| BCR108SH6433 |
|
Infineon Technologies
|
Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 |
Original |
PDF
|
|
12 |
| BCR108SH6433XTMA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 |
Original |
PDF
|
211.43KB |
|
