BD235 Search Results

BD235 PHILIPS

Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its

IC 7400

Abstract: BD233 BD237 BD235 7400 IC symbol bd233 equivalent bd237 equivalent
Contextual Info: BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD233 BD235 BD237 Unit Collector-Emitter Voltage VCBO 45 60 100 V Collector-Base Voltage VCEO 45

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • BD233 BD235 BD237 Power Dissipation: PCM =1.25W, Ta=25ć Collector Current : IC=2A

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃

bd237

Abstract: bd235 datasheet BD234
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃

bd233

Contextual Info: MCC TM Micro Commercial Components BD233 BD235 BD237
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"

BD237

Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
Contextual Info: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs

BD233

Abstract: BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR
Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V C ollector Base Voltage

BD235

Abstract: bd237 equivalent BD237 BD238 4189
Contextual Info: BD235 BD237 Low voltage NPN power transistors Features • Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The devices are manufactured in Planar technology with “Base Island” layout. The

Circuit details of BD237 equivalent

Abstract: bd237 equivalent NPN pnp MATCHED PAIRS to126 case BD234 BD233 BD235 BD236 BD237 BD238
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

BD237 toshiba

Contextual Info: TOSHIBA {DIS CR ETE/O PT O} Sb D E ^ T D ^ a S D 00DÖG74 BD233 BD235 IBD237I SILICON NPN EPITAXIA L BASE M ESA TYPE 9097250 TOSHIBA <DI S C R E T E /O P T O > 5òC 08074 □'' T - 3 3 ~ AUDIO POWER AMPLIFIER APPLICATIONS. Unit in tnm 7. 9 MAX. VERTICAL DEFLECTION OUTPUT.APPLICATION IN TV.

BD237

Abstract: BD235 bd237 equivalent BD233 BD234 bd237 datasheet bd235 datasheet SEM 238
Contextual Info: Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION

D237B

Contextual Info: rz 7 SGS-THOMSON BD235/BD236 BD237/BD238 Ä T # [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear

Contextual Info: 7 ^ 2 3 7 Q02Ô3TS ^ mT-3>3>'0°\ S G S -T H O M S O N M Ê B O iU lie ïlM iis S S G S- TH OM SON B D 2 3 3 /5 /7 B D 2 3 4 /6 /8 3GE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126

BD233

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃ Collector Current : IC=2A

BD237

Abstract: BD235 BD233 BD234
Contextual Info: SavantIC Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD234 /236 /238 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1

cb 237

Abstract: BD235 bd233
Contextual Info: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications

D237B

Abstract: D-235 NPN pnp MATCHED PAIRS d235
Contextual Info: r= Z ^ 7# S G S -T H O M S O N M û œ L K g ïM M S B D 2 3 3 / 5/7 B D 2 3 4 / 6/8 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126 plastic package intended for use in medium power

BD233

Abstract: BD237 bd237 equivalent BD237-10 BD235
Contextual Info: BD233/235/237 BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 2 A Collector-base voltage BD233 : 45 V V(BR)CBO: BD235: 60 V BD237: 100 V Operating and storage junction temperature range

Contextual Info: BD233, BD235, BD237 BD234, BD236, BD238 BD233, 235, 237 BD234, 236, 238 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5

Contextual Info: MCC TM Micro Commercial Components BD233 BD235 BD237
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x Power Dissipation: PCM =1.25W, Ta=25ć Collector Current : IC=2A

Contextual Info: _ y \ _ BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs

BD233

Abstract: FT501
Contextual Info: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs