BD243B Search Results

1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Contextual Info: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector – Emitter Saturation Voltage — BD244C * VCE sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

CDIL 244C

Abstract: BD243 BD243B BD243C BD244 BD244A BD244B BD244C BD243A 243b
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C BD244, 244A, 244B, 244C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS

bd639

Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul

DB244C

Abstract: BD244A
Contextual Info: r r z SG S-TH O M SO N Ä 7 # HD^^OilLliigTISiOliîiœi BD243A/B/C BD244A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS . BD243B, BF243C, BD244B AND DB244C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD243A, BD243B and BD243C are silicon epitaxial-base NPN transistors mounted in Jedec

Contextual Info: 7 C^ E 3 7 0 0 5 6 H 0 3 H • 3 - f I SGS-THOMSON BD243/A/B/C D^DD Dl^(Q Il[L[iCTI^ IRgDOS_ BD244/A/B/C S G S-THOMSON 3QE » POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD243, BD243A, BD243B and BD243C are si­ licon epitaxial-base NPN power transistors in Jedec

BD243

Abstract: BD243 transistor BD244A BD244B BD244C BD243A BD243B BD243C BD244 244A
Contextual Info: BD244/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BD243, BD243A, BD243B and BD243C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage : BD244 : BD244A : BD244B : BD244C

Contextual Info: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector − Emitter Saturation Voltage — VCE sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

Contextual Info: tSsml-donductot ZPioducti,/Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD243B/BD243C BD244B/BD244C COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The BD243B and BD243C are silicon

BD244C

Abstract: BD244 BD244B BD244A BD243 transistor bd244c BD243A BD243B BD243C BD243 transistor
Contextual Info: BD244/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD243, BD243A, BD243B and BD243C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit - 45 V : BD244A - 60 V : BD244B - 80

bd243c

Abstract: Transistor bd243c bd244c
Contextual Info: MOTOROLA Order this document by BD243B/D SEMICONDUCTOR TECHNICAL DATA NPN BD243B Com plem entary Silicon Plastic Power Transistors BD243C* PNP . . . designed for use in general purpose amplifier and switching applications. • • • • BD244B Collector - Emitter Saturation Voltage —

BD244

Abstract: 244-C bd244c
Contextual Info: BD244/A/B/C PNP EPITAXIAL SILICO N TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS • Complement to BD243, BD243A, BD243B and BD243C respectively ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Emitter Voltage: BD244 Rating Unit -45 V

BD2438

Abstract: BD243 BD243A B0243C BD243B BD243C BD244 BD244A BD244B BD244C
Contextual Info: Öl 387 5081 G E SOLID D fT|3ö?5aai STATE 01E QQ1 7 5 3 t i 17536 1 1-33 D - nro btectron Power Transistors File Num ber 673 BD243, BD243A, BD243B, BD243C

243b

Abstract: IC A 244 244A
Contextual Info: BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243,243A, 243B, 243C BD244,244A, 244B, 244C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A 8 C D E F G H J K L M N MIN MAX

Contextual Info: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS

DB244C

Abstract: BF243C BD243A BD244A, B OR C db244 BF243 BD243B BD243C BD244A BD244B
Contextual Info: BD243A/B/C BD244A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS n BD243B, BF243C, BD244B AND DB244C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD243A, BD243B and BD243C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.

1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Contextual Info: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector – Emitter Saturation Voltage — BD244C * VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc

K/O-187-BA

Contextual Info: N AUER PHIL IPS/DISCRETE - bbSBIBl 0 0 1 1 H 3 T 2SE D BD243; BD243A BD243B: BD243C T-3S-IJ SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in general amplifier and switching applica­ tions. P-N-P complements are BD244; 244A; 244B; and BD244C.

bd243

Contextual Info: BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD244 Series T0-220 PACKAGE TOP VIEW • 65 W at 25°C Case Temperature

Contextual Info: BD244/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD243, BD243A, BD243B and BD 243C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector-E m ltter V oltage : BD244 Rating Unit

BD243

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BD243/A/B/C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD244, BD244A, BD244B and BD244C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V : BD243A 60 V : BD243B 80 V : BD243C

BD243-S

Contextual Info: DI 387508 T G E SOLID DÈT|3fl7S0fll GG1753fc. 1 | ~ STATE 01E 17536 i - 3 3 -t D nro btectron Power Transistors File N um ber 673 BD243, BD243A, BD243B, BD243C Epitaxial-Base Silicon N-P-N

T1P110

Abstract: BD243B BD243C BD949 BD951 BD953 BD955 BU406 BU407 BU505
Contextual Info: TO-220 Power Package Transistors NPN Electrical Characteristics (T»=25"C, Unless Otherwise Specified) Maximum Ratings Type No. PB (W) Tc=25°c V C80 ^CEO ^EBO (V) Mifl (V) Min (V) Min BD243B 80 80 5 65 BD243C 100 100 5 BD949 60 60 BD951 80 BD953 'c80

BD243

Abstract: BD243A BD243B BD243C BD244
Contextual Info: BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD244 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available

BD243C

Abstract: BD244C BD243B BD244B DSA0082460 morocco bd244c
Contextual Info: BD243B/BD243C BD244B/BD244C  COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear