BD250 Search Results

BD250

Abstract: BD250A BD250C BD249 BD250B TIS635AA
Contextual Info: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BC125

Abstract: BD250 BD246 EQUIVALENT BD246 BD246C BD249 BD246A BD246B BD250A BD250B
Contextual Info: Inchange Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BD249/A/B/C ・125 W at 25°C case temperature ・25 A continuous collector current PINNING PIN DESCRIPTION 1 Base

BD250

Abstract: bd249 BD246 BD249 EQUIVALENT BD246A BD246B BD246C BD250A BD250B BD250C
Contextual Info: SavantIC Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BD249/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2

BD250C

Abstract: bd250
Contextual Info: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

bd250

Contextual Info: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD249 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current

bd249

Abstract: BD249C bd249a
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD250 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current

BD249

Abstract: BD249C transistor BD249 b BD249 EQUIVALENT BD249A BD249B BD250
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Contextual Info: BD2500 – BD2506 WTE POWER SEMICONDUCTORS Pb 25A BOSCH TYPE PRESS-FIT DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Anode + C Mechanical Data D 13mm Bosch Dim Min Max A 12.80 13.20 B 9.40 —

BD249

Abstract: BD249 EQUIVALENT BD249C transistor BD249 b BD249A BD249B BD250
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BD249

Abstract: BD249 EQUIVALENT BD249C BD250 BD249A BD249B
Contextual Info: SavantIC Semiconductor Product Specification BD249/A/B/C Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2

8D250C

Abstract: B0249
Contextual Info: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Copyright @1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed or Complementary Use with the B0249 Series • 125 W a t 25°C Case Temperature • 25 A Continuous Collector Current

BD249 TEXAS INSTRUMENTS

Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
Contextual Info: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P

transistor BD249 b

Abstract: transistor BD249C BD249C
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BD249

Abstract: BD249C
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Contextual Info: BD2500 – BD2506 WTE POWER SEMICONDUCTORS Pb 25A BOSCH TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 5.0µA



















































Mechanical Data

Contextual Info: BD2500 – BD2506 25A BOSCH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Anode + C Mechanical Data       D E Case: 13mm Bosch Type Press-Fit

Bosch

Abstract: BD2504 BD2505 BD2506 BD2500 BD2501 BD2502 BD2503
Contextual Info: BD2500 – BD2506 WTE POWER SEMICONDUCTORS Pb 25A BOSCH TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 5.0µA



















































Mechanical Data

BD250C

Abstract: BD249C
Contextual Info: BD249C / BD250C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO sus = 100V (Minimum) • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.

B0249C

Abstract: bd249 BD249C
Contextual Info: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright <D 1997, Power Innovations Limited, UK « JUN E 1973 * REVISED M ARCH 1997 Designed for Complementary Use with the BD250 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current

BOSCH diode

Abstract: BOSCH 0 280 120 400 BD2504 BD2500 BD2501 BD2502 BD2503 BD2505 BD2506 bosch 80 A diode
Contextual Info: BD2500 – BD2506 WTE POWER SEMICONDUCTORS 25A BOSCH TYPE PRESS-FIT DIODE Features ! Diffused Junction ! Low Leakage ! Low Cost ! High Surge Current Capability ! Typical IR less than 10µA

Bosch

Abstract: Bosch diode BD2504 BD2506 BD2500 BD2501 BD2502 BD2503 BD2505 Diode press-fit
Contextual Info: BD2500 – BD2506 WTE POWER SEMICONDUCTORS Pb 25A BOSCH TYPE PRESS-FIT DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Anode + C Mechanical Data D 13mm Bosch Dim Min Max A 12.80 13.20 B 9.40 —

TIP 29 transistor

Abstract: BD250C transistor BD 240 transistor tip 3055 transistor tip 62 bd250 B0250A BD250C TEXAS INSTRUMENTS BD 139 transistor mj 3055 npn
Contextual Info: BD250, BD250A, BD250B, BD250C FOR P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD249A-C 125 W at 25 °C Case Temperature 15 A rated Collector Current Min f T of 3 M H z at 10 V , 1 A

BD249 EQUIVALENT

Abstract: BD249 BD249A BD249B BD249C
Contextual Info: Inchange Semiconductor Product Specification BD249/A/B/C Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BD250/A/B/C ・125 W at 25°C case temperature ・25 A continuous collector current PINNING PIN DESCRIPTION 1 Base

BD250C

Abstract: BD249 BD250
Contextual Info: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available