BD895 Search Results

BD902

Abstract: BD898 BD900 bd902 equivalent BD896
Contextual Info: Inchange Semiconductor Product Specification BD896/898/900/902 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD895/897/899/901 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment, general amplifier,and analogue switching

BD897A

Abstract: BD895A BD899A
Contextual Info: SavantIC Semiconductor Product Specification BD895A/897A/899A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD896A/898A/900A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896A, BD898A and BD900A ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW B 1 C

transistor BD901

Abstract: BD897 BD901 BD895 BD896 BD898 BD899 BD900 BD902 case BD901
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

BD895

Contextual Info: Power Transistors www.jmnic.com BD895 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 45 V VCEO Collector to emitter voltage

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

BD902

Abstract: BD901 BD895 BD896 BD897 BD898 BD899 BD900
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

C03GE

Abstract: BD901 BD597 BD897 BD897A BD899 BD895 BD895A BD896 BD899A
Contextual Info: 01 G E SOLID STATE 3875081 G E SOLID STATE m o 1~E 17277 _ File Number « 1240 TI 3Ö7SDÖ1 0017577 3 |~~ D uanin gto n Power Transistors BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 8-Ampere N-P-N Darlington Power Transistors

BD901

Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
Contextual Info: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current

BD901

Abstract: transistor BD901 BD897 BD898 BD899 BD900 BD902 BD895 BD896
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895, BD897, BD899 and BD901 TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD896A, BD898A and BD900A TO-220 PACKAGE TOP VIEW ● 70 W at 25°C Case Temperature

898-A

Abstract: BD900A BD896A BD898A
Contextual Info: SavantIC Semiconductor Product Specification BD896A/898A/900A Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD895A/897A/901A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment, general amplifier,and analogue switching

BD901

Abstract: BD897 BD895 BD899 case BD901 bd901 power applications
Contextual Info: SavantIC Semiconductor Product Specification BD895/897/899/901 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD896/898/900/902 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD896, BD898, BD900 and BD902 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A This series is currently available, but

Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • AUG UST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895, BD897, BD899 and BD901 T 0 -2 2 0 PACKAGE TOP VIEW • 70 W at 25°C Case Temperature

Contextual Info: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations limited. UK AUGUST 1 9 9 3 -REVISED MARCH 1997 Designed fo r Com plem entary Use w ith BD896A, B0898A and BDSOOA TO-220 PACKAGE TOP VIEW 70 W a t 25°C Case Temperature

B0897

Abstract: D895 BD901 case BD901
Contextual Info: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright t> 1997. Power Innovations Limited. UK_ • Designed for Complementary Use with BD896, B0898, BD900 and BD902 • 70 W at 2S°C Case Temperature • 8 A Continuous Collector Current •

D900B

Abstract: B0896 BD696
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER OARLINGTONS Copyright 1997, Power timoyatlons lim ited, U K _ AUGUST 1993 - REVISED M ARCH 1997 • Designed for Complementary Use with BD895, BDB97, BD899 and BD901 •

BD698

Abstract: BD696
Contextual Info: BD896A, BD898A, BD900A PNP SILICON POWER DARUNGTONS C o p y rig h t 1997. P ow er Innovations Limited, U K _ A U G U S T 1993 - R E V IS E D M A R C H 1997 • Designed for Complementary U se with BD895A, BD 8S7A and B0899A • 70 W at 25 °C Case Temperature

D895

Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
Contextual Info: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | BD895, BD895A BD897, BD897A BD899, BD899A BD901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC POWER SILICON NPN DARLINGTONS DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS . for use as output devices in complementary general-purpose

BD901

Abstract: BD895 BD896 BD897 BD898 BD899 BD900 BD902
Contextual Info: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE TOP VIEW

BD901

Abstract: BD897 ic 901 BD895 BD899 case BD901
Contextual Info: Inchange Semiconductor Product Specification BD895/897/899/901 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD896/898/900/902 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and